mospekv |
EPFL EKV MOSFET model |
|---|
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Author(s): Wonhoon Jang| Parameter | Type | Default value | Required? |
|---|---|---|---|
| type: N-channel or P-channel MOS | DOUBLE | -1 | no |
| l: Gate length (m) | DOUBLE | 1e-06 | no |
| w: Gate width (m) | DOUBLE | 1e-06 | no |
| np: Parallel multiple device number | DOUBLE | 1 | no |
| ns: Serial multiple device number | DOUBLE | 1 | no |
| cox: Gate oxide capacitance per area (F/m^2) | DOUBLE | 0 | no |
| xj: Junction depth (m) | DOUBLE | 1e-07 | no |
| dw: Channel width correction (m) | DOUBLE | 0 | no |
| dl: Channel length correction (m) | DOUBLE | 0 | no |
| vto: Long_channel threshold voltage (V) | DOUBLE | 0 | no |
| gamma: Body effect parameter (V^1/2) | DOUBLE | 0 | no |
| phi: Bulk Fermi potential (V) | DOUBLE | 0 | no |
| kp: Transconductance parameter (A/V^2) | DOUBLE | 0 | no |
| eo: Mobility reduction coefficient (V/m) | DOUBLE | 0 | no |
| ucrit: Longitudinal critical field (V/m) | DOUBLE | 0 | no |
| tox: Oxide thickness (m) | DOUBLE | 0 | no |
| nsub: Channel doping (1/cm^3) | DOUBLE | 0 | no |
| vfb: Flat-band voltage (V) | DOUBLE | -2003 | no |
| uo: Low-field mobility(cm^2/(V.s)) | DOUBLE | 0 | no |
| vmax: Saturation velocity (m/s) | DOUBLE | 0 | no |
| theta: Mobility recuction coefficient (1/V) | DOUBLE | -1 | no |
| lambda: Channel-length modulation | DOUBLE | 0.5 | no |
| weta: Narrow-channel effect coefficient | DOUBLE | 0.25 | no |
| leta: Short-channel effect coefficient | DOUBLE | 0.1 | no |
| qo: Reverse short channel effect peak charge density (A.s/m^2) | DOUBLE | 0 | no |
| lk: Reverse short channel effect characteristic length (m) | DOUBLE | 2.9e-07 | no |
| iba: First impact ionization coefficient (1/m) | DOUBLE | 0 | no |
| ibb: Second impact ionization coefficient (V/m) | DOUBLE | 3e+08 | no |
| ibn: Saturation voltage factor for impact ionization | DOUBLE | 1 | no |
| tcv: Threshold voltage temperature coefficient (V/K) | DOUBLE | 0.001 | no |
| bex: Mobility temperature exponent | DOUBLE | -1.5 | no |
| ucex: Longitudinal critical field temperature exponent | DOUBLE | 0.8 | no |
| ibbt: Temperature coefficient for IBB (1/K) | DOUBLE | 0.0009 | no |
| avto: Area related threshold voltage mismatch parameter (Vm) | DOUBLE | 0 | no |
| akp: Area related gain mismatch parameter (m) | DOUBLE | 0 | no |
| agamma: Area related body effect mismatch parameter (V^(1/2)m) | DOUBLE | 0 | no |
| kf: Flicker noise coefficient | DOUBLE | 0 | no |
| af: Flicker noise exponent | DOUBLE | 1 | no |
| nqs: Non-Quasi-Static operation switch | DOUBLE | 0 | no |
| satlim: Ratio defining the saturation limit if/ir | DOUBLE | 54.5982 | no |
| xqc: Charge/capacitance model selector | DOUBLE | 0.4 | no |
| scale: Scale parameter | DOUBLE | 1 | no |
| tnom: Nominal temperature of model parameters (K) | DOUBLE | 300.15 | no |
| tmp: Model simulation temperature (K) | DOUBLE | 300.15 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09