mospbsim3soi5t1 |
Mosfet model using Mospbsim3SOI5T1 level, version 3.2.4 |
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Author(s): Ramya Mohan| Parameter | Type | Default value | Required? |
|---|---|---|---|
| l: Length (m) | DOUBLE | 5e-06 | no |
| w: Width (m) | DOUBLE | 5e-06 | no |
| tsi: Silicon film thickness (m) | DOUBLE | 1e-07 | no |
| tbox: Buried Oxide thickness (m) | DOUBLE | 3e-07 | no |
| tox: Gate oxide thickness (m) | DOUBLE | 1e-08 | no |
| toxqm: Effective oxide thickness considering quantum effect | DOUBLE | 1e-08 | no |
| xj: S/DJunction depth (m) | DOUBLE | 1e-07 | no |
| nch: Channel doping concentration (1/cm^3) | DOUBLE | 1.7e+17 | no |
| nsub: Substrate doping concentration (1/cm^3) | DOUBLE | 6e+16 | no |
| ngate: Poly-gate doping concentration (1/cm^3) | DOUBLE | 0 | no |
| vth0: Threshold voltage @Vbs=0 for long and wide device | DOUBLE | 0.7 | no |
| k1: First order body effect coefficient (V^0.5) | DOUBLE | 0.6 | no |
| k1w1: First body effect width dependent parameter (m) | DOUBLE | 0 | no |
| k1w2: Second body effect width dependent parameter (m) | DOUBLE | 0 | no |
| k2: Second order body effect coefficient | DOUBLE | 0 | no |
| k3: Narrow width effect coefficient | DOUBLE | 0 | no |
| k3b: Body effect coefficient of k3 (1/V) | DOUBLE | 0 | no |
| kb1: Backgate body charge coefficient | DOUBLE | 1 | no |
| w0: Narrow width effect parameter (m) | DOUBLE | 0 | no |
| nlx: Lateral non-uniform doping parameter (m) | DOUBLE | 1.74e-07 | no |
| dvt0: First coefficient of short-channel effect on Vth | DOUBLE | 2.2 | no |
| dvt1: Second coefficient of short-channel effect on Vth | DOUBLE | 0.53 | no |
| dvt2: Body-bias coefficient of short-channel effect on Vth (1/V) | DOUBLE | -0.032 | no |
| dvt0w: First coefficient of narrow width effect on Vth for small channel length | DOUBLE | 0 | no |
| dvt1w: Second coefficient of narrow width effect on Vth for small channel length | DOUBLE | 5.3e+06 | no |
| dvt2w: Body-bias coefficient of narrow width effect on Vth for small channel length (1/V) | DOUBLE | -0.032 | no |
| u0: Mobility at Temp=Tnom (cm^2/V-sec) | DOUBLE | 0.025 | no |
| ua: First-oreder mobility degradation coefficient (m/V) | DOUBLE | 2.25e-09 | no |
| ub: Second-order mobility degradation coefficient (m/V)^2 | DOUBLE | 5.9e-19 | no |
| uc: Body-effect of mobility degradation coefficient (1/V) | DOUBLE | -0.0465 | no |
| vsat: Saturation velocity at Temp=Tnom (m/sec) | DOUBLE | 80000 | no |
| a0: Bulk charge effect coefficient for channel length | DOUBLE | 1 | no |
| ags: Gate bias coefficient of Abulk (1/V) | DOUBLE | 0 | no |
| b0: Bulk charge effect coefficient for channel width (m) | DOUBLE | 0 | no |
| b1: Bulk charge effect width offset (m) | DOUBLE | 0 | no |
| keta: Body-bias coefficient of bulk charge effect (1/V) | DOUBLE | 0 | no |
| ketas: Surface potential adjustment for bulk charge effect (V) | DOUBLE | 0 | no |
| a1: First non-saturation effect parameter (1/V) | DOUBLE | 0 | no |
| a2: Second non-saturation effect parameter | DOUBLE | 1 | no |
| rdsw: Parasitic resistance per unit width (ohm-um) | DOUBLE | 100 | no |
| prwb: Body effect coefficient of rdsw (1/V) | DOUBLE | 0 | no |
| prwg: Gate-bias effect coefficient of rdsw | DOUBLE | 0 | no |
| wr: Width offset from Weff for Rds calculation | DOUBLE | 1 | no |
| nfactor: Subthreshold swing factor | DOUBLE | 1 | no |
| wint: Width offset fitting parameter from I-V without bias (m) | DOUBLE | 0 | no |
| lint: Length offset fitting parameter from I-V without bias (m) | DOUBLE | 0 | no |
| dwg: Coefficient of Weff's gate dependence (m/V) | DOUBLE | 0 | no |
| dwb: Coefficient of Weff's substrate body bias dependence (m/V)^0.5 | DOUBLE | 0 | no |
| dwbc: Width offset for body contact isolation edge (m) | DOUBLE | 0 | no |
| voff: Offset voltage in the threshold region for large W and L (V) | DOUBLE | -0.08 | no |
| eta0: DIBL coefficeint subthreshold region | DOUBLE | 0.08 | no |
| etab: Body bias coefficeint for the subthreshold DIBL effect (1/V) | DOUBLE | -0.07 | no |
| dsub: DIBL coefficient in the subthreshold region | DOUBLE | 0.56 | no |
| cit: Interface trap capacitance (F/m^2) | DOUBLE | 0 | no |
| cdsc: Drain/Source to channel coupling capacitance (F/m^2) | DOUBLE | 0.00024 | no |
| cdscb: Body-bias sensitivity of cdsc (F/m^2) | DOUBLE | 0 | no |
| cdscd: Drain-bias sensitivity of cdsc (F/m^2) | DOUBLE | 0 | no |
| pclm: Channel length modulation parameter | DOUBLE | 1.3 | no |
| pdibl1: First output resistance DIBL effect correction parameter | DOUBLE | 0.39 | no |
| pdibl2: Second output resistance DIBL effect correction parameter | DOUBLE | 0.0086 | no |
| pvag: Gate dependence of Early voltage | DOUBLE | 0 | no |
| delta: Effective Vds parameter | DOUBLE | 0.01 | no |
| alpha0: The first parameter of impact ionization current (m/V) | DOUBLE | 0 | no |
| beta0: First Vds dependent parameter of impact ionization current (1/V) | DOUBLE | 0 | no |
| beta1: Second Vds dependent parameter of impact ionization current | DOUBLE | 0 | no |
| beta2: Third Vds dependent parameter of impact ionization current (V) | DOUBLE | 0.1 | no |
| vdsatii0: Nominal drain saturation voltage at threshold for impact ionization current (V) | DOUBLE | 0.9 | no |
| cgeo: Gate substrate overlap capacitance per unit channel length (F/m) | DOUBLE | 0 | no |
| cjswg: Source/Drain (gate side) sidewall junction capacitance per unit width (normalized to 100nm tsi) (F/m^2) | DOUBLE | 1e-10 | no |
| pbswg: Source/Drain (gate side) sidewall junction capacitance built in potential (V) | DOUBLE | 0.7 | no |
| mjswg: Source/Drain (gate side) sidewall junction capacitance grading coefficient (V) | DOUBLE | 0.5 | no |
| tt: Diffusion capacitance transit time coefficient (sec) | DOUBLE | 1e-12 | no |
| csdesw: S/D sidewall fringing capacitance per unit length (F/m) | DOUBLE | 0 | no |
| cgsl: Light doped source-gate region overlap capacitance (F/m) | DOUBLE | 0 | no |
| cgdl: Light doped drain-gate region overlap capacitance (F/m) | DOUBLE | 0 | no |
| ckappa: Coefficient for lightly doped region overlap capacitance fringing field capacitance (F/m) | DOUBLE | 0.6 | no |
| clc: Constant term for the short channel model (m) | DOUBLE | 1e-08 | no |
| cle: Exponential term for the short channel model | DOUBLE | 0 | no |
| dlc: Length offset fitting parameter for gate charge (m) | DOUBLE | 0 | no |
| dlcb: Length offset fitting parameter for body charge (m) | DOUBLE | 0 | no |
| dlbg: Length offset fitting parameter for backgate charge (m) | DOUBLE | 0 | no |
| dwc: Width offset fitting parameter from C-V (m) | DOUBLE | 0 | no |
| delvt: Threshold voltage adjust for C-V (V) | DOUBLE | 0 | no |
| fbody: Scaling factor for body charge | DOUBLE | 1 | no |
| moin: Coefficient for the gate-bias dependent surface potential V^0.5 | DOUBLE | 15 | no |
| tnom: Parameter measurement temperature (K) | DOUBLE | 300.15 | no |
| ute: Temperature coefficient of mobility | DOUBLE | -1.5 | no |
| kt1: Temperature coefficient of Vth (V) | DOUBLE | -0.11 | no |
| kt1l: Channel length dependence of the temperature coefficient of Vth (V*m) | DOUBLE | 0 | no |
| kt2: Body-bias coefficient of the Vth temperature effect | DOUBLE | 0.022 | no |
| ua1: Temperature coefficient for ua (m/V) | DOUBLE | 4.31e-09 | no |
| ub1: Temperature coefficient for ub ((m/V)^2) | DOUBLE | -7.61e-18 | no |
| uc1: Temperature coefficient for uc (1/V) | DOUBLE | -0.056 | no |
| at: Temperature coefficient of vsat (m/sec) | DOUBLE | 33000 | no |
| prt: Temperature coefficient of rdsw (ohm-um) | DOUBLE | 0 | no |
| vbm: Maximum body voltage | DOUBLE | -3 | no |
| xt1: Doping depth | DOUBLE | 1.55e-07 | no |
| pdiblb: Body-effect on drain induced barrier lowering | DOUBLE | 0 | no |
| ll: Length reduction parameter | DOUBLE | 0 | no |
| llc: Length reduction parameter for CV | DOUBLE | 0 | no |
| lln: Length reduction parameter | DOUBLE | 1 | no |
| lw: Length reduction parameter | DOUBLE | 0 | no |
| lwc: Length reduction parameter for CV | DOUBLE | 0 | no |
| lwn: Length reduction parameter | DOUBLE | 1 | no |
| lwl: Length reduction parameter | DOUBLE | 0 | no |
| lwlc: Length reduction parameter for CV | DOUBLE | 0 | no |
| wl: Width reduction parameter | DOUBLE | 0 | no |
| wlc: Width reduction parameter for CV | DOUBLE | 0 | no |
| wln: Width reduction parameter | DOUBLE | 1 | no |
| ww: Width reduction parameter | DOUBLE | 0 | no |
| wwc: Width reduction parameter for CV | DOUBLE | 0 | no |
| wwn: Width reduction parameter | DOUBLE | 1 | no |
| wwl: Width reduction parameter | DOUBLE | 0 | no |
| wwlc: Width reduction parameter for CV | DOUBLE | 0 | no |
| temp: Circuit temperature | DOUBLE | 300.15 | no |
| acde: Exponential coefficient for charge in m/V | DOUBLE | 1 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09