mospbsim3

Mosfet model using bsim3 level, version 3.2.4

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Author(s): Ramya Mohan

Usage:

Parameter TypeDefault value Required?
l: Length DOUBLE 1e-06 no
w: Width DOUBLE 1e-06 no
tox: Gate oxide thickness (m) DOUBLE 1.5e-08 no
toxm: Gate oxide thickness used in extraction DOUBLE 1.5e-08 no
cdsc: Drain/Source and channel coupling capacitance DOUBLE 0.00024 no
cdscb: Body-bias dependence of cdsc DOUBLE 0 no
cdscd: Drain-bias dependence of cdsc DOUBLE 0 no
cit: Interface state capacitance DOUBLE 0 no
nfactor: Subthreshold swing coefficient DOUBLE 1 no
xj: Junction depth (m) DOUBLE 1.5e-07 no
vsat: Saturationvelocity at tnom DOUBLE 80000 no
at: Temperature coefficient of vsat DOUBLE 33000 no
a0: Non-uniform depletion width effect coefficient DOUBLE 1 no
ags: Gate bias coefficient of Abulk DOUBLE 0 no
a1: Non-saturation effect coefficient DOUBLE 0 no
a2: Non-saturation effect coefficient DOUBLE 1 no
keta: Body-bias coefficient of non-uniform depletion width effect DOUBLE -0.047 no
nsub: Substrate doping concentration DOUBLE 6e+16 no
nch: Channel doping concentration DOUBLE 1.7e+17 no
ngate: Poly-gate doping concentration DOUBLE 0 no
vbm: Maximum body voltage DOUBLE -3 no
xt1: Doping depth DOUBLE 1.55e-07 no
kt1: Temperature coefficient of Vth DOUBLE -0.11 no
kt1l: Temperature coefficient of Vth DOUBLE 0 no
kt2: Body-coefficient of kt1 DOUBLE 0.022 no
k3: Narrow width effect coefficient DOUBLE 80 no
k3b: Body effect coefficient of k3 DOUBLE 0 no
w0: Narrow width effect parameter DOUBLE 2.5e-06 no
nlx: Lateral non-uniform doping effect DOUBLE 1.74e-07 no
dvt0: Short channel effect coefficient 0 DOUBLE 2.2 no
dvt1: Short channel effect coefficient 1 DOUBLE 0.53 no
dvt2: Short channel effect coefficient 2 DOUBLE -0.032 no
dvt0w: Narrow width effect coefficient 0 DOUBLE 0 no
dvt1w: Narrow width effect coefficient 1 DOUBLE 5.3e+06 no
dvt2w: Narrow width effect coefficient 2 DOUBLE -0.032 no
drout: DIBL coefficient of output resistance DOUBLE 0.56 no
dsub: DIBL coefficient in the subthreshold region DOUBLE 0.56 no
ua: Linear gate dependence of mobility DOUBLE 2.25e-09 no
ub: Quadratic gate dependence of mobility DOUBLE 5.87e-19 no
uc: Body-bias dependence of mobility DOUBLE -4.65e-11 no
u0: Low-field mobility at Tnom DOUBLE 0.025 no
voff: Threshold voltage offset DOUBLE -0.08 no
tnom: Parameter measurement temperature DOUBLE 300.15 no
elm: Non-quasi-static Elmore Constant Parameter DOUBLE 5 no
delta: Effective Vds parameter DOUBLE 0.01 no
rdsw: Sorce-drain resistance per width DOUBLE 0 no
prwg: Gate-bias effect on parasitic resistance DOUBLE 0 no
prwb: Body-effect on parasitic resistance DOUBLE 0 no
prt: Temperature coefficient of parasitic resistance DOUBLE 0 no
eta0: Subthreshold region DIBL coefficeint DOUBLE 0.08 no
etab: Subthreshold region DIBL coefficeint DOUBLE -0.07 no
pclm: Channel length modulation coefficient DOUBLE 1.3 no
pdibl1: Drain-induced barrier lowering oefficient DOUBLE 0.39 no
pdibl2: Drain-induced barrier lowering oefficient DOUBLE 0.0086 no
pdiblb: Body-effect on drain induced barrier lowering DOUBLE 0 no
pscbe1: Substrate current body-effect coeffiecient DOUBLE 4.24e+08 no
pscbe2: Substrate current body-effect coeffiecient DOUBLE 1e-05 no
pvag: Gate dependence of output resistance parameter DOUBLE 0 no
vfb: Flat band voltage DOUBLE -1 no
acde: Exponential coefficient for finite charge thickness DOUBLE 1 no
moin: Coefficient for gate-bias dependent surface potential DOUBLE 15 no
noff: C-V turn-on/off parameter DOUBLE 1 no
voffcv: C-V lateral shift parameter DOUBLE 0 no
lint: Length reduction parameter DOUBLE 0 no
ll: Length reduction parameter DOUBLE 0 no
llc: Length reduction parameter for CV DOUBLE 0 no
lln: Length reduction parameter DOUBLE 1 no
lw: Length reduction parameter DOUBLE 0 no
lwc: Length reduction parameter for CV DOUBLE 0 no
lwn: Length reduction parameter DOUBLE 1 no
lwl: Length reduction parameter DOUBLE 0 no
lwlc: Length reduction parameter for CV DOUBLE 0 no
wr: Width dependence of rds DOUBLE 1 no
wint: Width reduction parameter DOUBLE 0 no
dwg: Width reduction parameter DOUBLE 0 no
dwb: Width reduction parameter DOUBLE 0 no
wl: Width reduction parameter DOUBLE 0 no
wlc: Width reduction parameter for CV DOUBLE 0 no
wln: Width reduction parameter DOUBLE 1 no
ww: Width reduction parameter DOUBLE 0 no
wwc: Width reduction parameter for CV DOUBLE 0 no
wwn: Width reduction parameter DOUBLE 1 no
wwl: Width reduction parameter DOUBLE 0 no
wwlc: Width reduction parameter for CV DOUBLE 0 no
b0: Abulk narrow width parameter DOUBLE 0 no
b1: Abulk narrow width parameter DOUBLE 0 no
clc: Vdsat paramater for C-V model DOUBLE 1e-07 no
cle: Vdsat paramater for C-V model DOUBLE 0.6 no
alpha0: Substrate current model parameter DOUBLE 0 no
alpha1: Substrate current model parameter DOUBLE 0 no
beta0: Diode limiting current DOUBLE 30 no
ute: Temperature coefficient of mobility DOUBLE -1.5 no
k1: First order body effect coefficient DOUBLE 0.53 no
k2: Second order body effect coefficient DOUBLE -0.0186 no
temp: Circuit temperature DOUBLE 373.15 no
ua1: Temperature coefficient for ua in m/V DOUBLE 4.31e-09 no
ub1: Temperature coefficient for ub in (m/V)^2 DOUBLE -7.61e-18 no
uc1: Temperature coefficient for uc in m/V^2 DOUBLE -5.6e-11 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09