mosp9 |
Philips MOS9 model |
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Author(s): Yogesh Kuldip Ajit Xuemin Dapeng Xin| Parameter | Type | Default value | Required? |
|---|---|---|---|
| LEVEL: Model Level | DOUBLE | 903 | no |
| VT0: Threshold voltage at zero back-bias for the actual transistor at the actual temperature(volts) | DOUBLE | 1.08213 | no |
| K0: low back-bias body factor for the actual transistor(V^1/2) | DOUBLE | 0.428017 | no |
| K: high back-bias body factor for the actual transistor(V^1/2) | DOUBLE | 0.428017 | no |
| PHIB: Surface potential at strong inversion for the actual transistor at the actual temperature(volts) | DOUBLE | 0.6226 | no |
| VSBX: Transition voltage for the dual-k-factor model for the actual transistor(volts) | DOUBLE | 1e-12 | no |
| BET: gain factor for the actual transistor at the actual temperature(A/V^2) | DOUBLE | 0.00048415 | no |
| THE1: coefficient of the mobility reduction due to the gate induced field for the actual transistor at the actual temperature(1/V) | DOUBLE | 0.204681 | no |
| THE2: coefficient of the mobility reduction due to the back-biased for the actual transistor at the actual temperature(1/V^0.5) | DOUBLE | 0.149249 | no |
| THE3: coefficient of the mobility reduction due to the lateral field for the actual transistor at the actual temperature(1/V) | DOUBLE | 0.0326763 | no |
| GAM1: coefficient for the drain induced threshold shift for large gate drive for the actual transistor (V^(1-ETADS)) | DOUBLE | 0.99057 | no |
| ETADS: exponent of the vds dependence of GAM1 for the actual transistor | DOUBLE | 0.6 | no |
| ALP: factor of the channel length modulation for the actual transistor | DOUBLE | 0.0476693 | no |
| VP: characteristic voltage of the channel length modulation for the actual transistor (V) | DOUBLE | 0.18612 | no |
| GAM00: coefficient for the drain induced threshold shift at zero gate drive for the actual transistor | DOUBLE | 0.0111833 | no |
| ETAGAM: exponent of the back-bias dependence of gam0 for the actual transistor | DOUBLE | 1 | no |
| M0: factor of the subthreshold slope for the actual transistor at the actual temperature | DOUBLE | 0.380199 | no |
| ETAM: exponent of the back-bias dependence of m for the actual transistor | DOUBLE | 1 | no |
| PHIT: thermal voltage at the actual temperature(volts) | DOUBLE | 0.0266268 | no |
| ZET1: weak inversion correction factor for the actual transistor | DOUBLE | 1.27045 | no |
| VSBT: limiting voltage of vsb dependence of m and gam0 for the actual transistor(volts) | DOUBLE | 100 | no |
| A1: factor of the weak avalanche current for the actual transistor | DOUBLE | 6.8583 | no |
| A2: exponent of the weak avalanche current for the actual transistor(volts) | DOUBLE | 57.3241 | no |
| A3: factor of the drain source voltage above which weak avalanche occurs for the actual transistor | DOUBLE | 0.425409 | no |
| COX: gate to channel capacitance for the actual transistor(farads) | DOUBLE | 2.71711e-14 | no |
| CGDO: gate drain overlap capacitance for the actual transistor(farads) | DOUBLE | 6.3584e-15 | no |
| CGSO: gate source overlap capacitance for the actual transistor(farads) | DOUBLE | 6.3584e-15 | no |
| NT: coefficient of thermal noise for the actual transistor(J) | DOUBLE | 2.21652e-20 | no |
| NFMOD: switch that selects either new or old flicker noise model for the actual transistor | DOUBLE | 0 | no |
| NF: flicker noise coefficient for the actual transistor(for NFMOD=0)(V^2) | DOUBLE | 0 | no |
| NFA: first coefficient of flicker noise coefficient for the actual transistor(for NFMOD=1)(1/V)(1/m^4)) | DOUBLE | 1.53e+22 | no |
| NFB: second coefficient of flicker noise coefficient for the actual transistor(for NFMOD=1)(1/V)(1/m^2) | DOUBLE | 4.06e+06 | no |
| NFC: third coefficient of flicker noise coefficient for the actual transistor(for NFMOD=1)(1/V) | DOUBLE | 2.92e-10 | no |
| TOX: thickness of gate oxide layer (meters) | DOUBLE | 2.5e-08 | no |
| MULT: number of devices operating in parallel | DOUBLE | 1 | no |
| LER: Effective channel length of the reference transistor (m) | DOUBLE | 1.25e-06 | no |
| WER: Effective channel width of the reference transistor (m) | DOUBLE | 2e-05 | no |
| LVAR: Difference between the actual and the programmed poly-silicon gate length (m) | DOUBLE | -4.6e-07 | no |
| LAP: Effective channel length reduction per side due to the lateral diffusion of the source/drain dopant ions (m) | DOUBLE | 2.5e-08 | no |
| WVAR: Difference between the actual and the programmed field-oxide opening (m) | DOUBLE | -1.3e-07 | no |
| WOT: Effective reduction of the channel width per side due to the lateral diffusion of the channel-stop dopant ions (m) | DOUBLE | 0 | no |
| TR: Temperature at which the parameters for the reference transistor have been determined (0C) | DOUBLE | 21 | no |
| VT0R: Threshold voltage at zero back-bias for the reference transistor at the reference temperature (V) | DOUBLE | 1.1 | no |
| STVT0: Coefficient of the temperature dependence VT0 (VK-1) | DOUBLE | -0.0017 | no |
| SLVT0: Coefficient of the length dependence of VT0 (Vm) | DOUBLE | 3.5e-08 | no |
| SL2VT0: Second coefficient of the length dependence of VT0 (Vm2) | DOUBLE | 0 | no |
| SL3VT0: Third coefficient of the length dependence of VT0 (V) | DOUBLE | 0 | no |
| SWVT0: Coefficient of the width dependence of VT0 (Vm) | DOUBLE | 5e-08 | no |
| K0R: Low-backbias body factor for the reference transistor (V1/2) | DOUBLE | 0.47 | no |
| SLK0: Coefficient of the length dependence of K0 (V1/2m) | DOUBLE | -2e-07 | no |
| SL2K0: Second coefficient of the length dependence of K0 (V1/2m2) | DOUBLE | 0 | no |
| SWK0: Coefficient of the width dependence of K0 (V1/2m) | DOUBLE | 1.15e-07 | no |
| KR: High-backbias body factor for the reference transistor (V1/2) | DOUBLE | 0.47 | no |
| SLK: Coefficient of the length dependence of K (V1/2m) | DOUBLE | -2e-07 | no |
| SL2K: Second coefficient of the length dependence of K (V1/2m2) | DOUBLE | 0 | no |
| SWK: Coefficient of the width dependence of K (V1/2m) | DOUBLE | 1.15e-07 | no |
| PHIBR: Surface potential at strong inversion for the reference transistor at the reference temperature (V) | DOUBLE | 0.65 | no |
| VSBXR: Transition voltage for the dual-k-factor model for the reference transistor (V) | DOUBLE | 1e-12 | no |
| SLVSBX: Coefficient of the length dependence of VSBX (Vm) | DOUBLE | 0 | no |
| SWVSBX: Coefficient of the width dependence VSBX (Vm) | DOUBLE | 0 | no |
| BETSQ: Gain factor for an infinite square transistor at the reference temperature (AV-2) | DOUBLE | 2.61e-05 | no |
| ETABET: Exponent of the temperature dependence of the gain factor (-) | DOUBLE | 1.6 | no |
| LP1: Characteristic length of first profile (m) | DOUBLE | 1e-06 | no |
| FBET1: Relative mobility decrease due to first profile (-) | DOUBLE | 0 | no |
| LP2: Characteristic length of second profile (m) | DOUBLE | 1e-08 | no |
| FBET2: Relative mobility decrease due to second profile (-) | DOUBLE | 0 | no |
| THE1R: Coefficient of the mobility reduction due to the gate-induced field for the reference transistor at the reference temperature (V-1) | DOUBLE | 0.19 | no |
| STTHE1R: Coefficient of the temperature dependence of THE1 for the reference transistor (V-1K-1) | DOUBLE | 0 | no |
| SLTHE1R: Coefficient of the length dependence of THE1 at the reference temperature (V-1m) | DOUBLE | 1.7e-07 | no |
| STLTHE1: Coefficient of the temperature dependence of the length dependence of THE 1 (V-1mK-1) | DOUBLE | 0 | no |
| GTHE1: Parameter that selects either the old ( ) or the new ( ) scaling gTHE0 = gTHE1 = rule of THE 1 (-) | DOUBLE | 0 | no |
| SWTHE1: Coefficient of the width dependence of THE1 (V-1m) | DOUBLE | -8e-08 | no |
| WDOG: Characteristic drawn gate width, below which dogboning appears (m) | DOUBLE | 0 | no |
| FTHE1: Coefficient describing the geometry dependence of THE1 for W < WDOG (-) | DOUBLE | 0 | no |
| THE2R: Coefficient of the mobility reduction due to the back-bias for the reference transistor at the reference temperature (V-1/2) | DOUBLE | 0.165 | no |
| STTHE2R: Coefficient of the temperature dependence of THE2 for the reference transistor (V-1/2K-1) | DOUBLE | 0 | no |
| SLTHE2R: Coefficient of the length dependence of THE2 at the reference temperature (V-1/2m) | DOUBLE | -7.5e-08 | no |
| STLTHE2: Coefficient of the temperature dependence of the length dependence of THE2 (V-1/2mK-1) | DOUBLE | 0 | no |
| SWTHE2: Coefficient of the width dependence of THE2 (V-1/2m) | DOUBLE | 2e-08 | no |
| THE3R: Coefficient of the mobility reduction due to the lateral field for the reference transistor at the reference temperature (V-1) | DOUBLE | 0.027 | no |
| STTHE3R: Coefficient of the temperature dependence of THE3 for the reference temperature (V-1K-1) | DOUBLE | 0 | no |
| SLTHE3R: Coefficient of the length dependence of THE3 at the reference temperature (V-1m) | DOUBLE | 2.7e-08 | no |
| STLTHE3: Coefficient of the temperature dependence of the length dependence of THE3 (V-1mK-1) | DOUBLE | 0 | no |
| SWTHE3: Coefficient of the width dependence of THE3 (V-1m) | DOUBLE | 1.1e-08 | no |
| GAM1R: Coefficient for the drain induced threshold shift for large gate drive for the reference transistor (V(1-ETADS)) | DOUBLE | 0.077 | no |
| SLGAM1: Coefficient of the length dependence of GAM1 (V(1-ETADS)m) | DOUBLE | 1.05e-07 | no |
| SWGAM1: Coefficient of the width dependence of GAM1 (V(1-ETADS)m) | DOUBLE | -1.1e-08 | no |
| ETADSR: Exponent of the VDS dependence of GAM1 for the reference transistor (-) | DOUBLE | 0.6 | no |
| ALPR: Factor of the channel-length modulation for the reference transistor (-) | DOUBLE | 0.044 | no |
| ETAALP: Exponent of the length dependence of ALP (-) | DOUBLE | 0.17 | no |
| SLALP: Coefficient of the length dependence of ALP (mETAALP) | DOUBLE | 0.009 | no |
| SWALP: Coefficient of the width dependence of ALP (m) | DOUBLE | 1.8e-10 | no |
| VPR: Characteristic voltage of the channel length modulation for the reference transistor (V) | DOUBLE | 0.235 | no |
| GAM00R: Coefficient of the drain induced threshold shift at zero gate drive for the reference transistor (-) | DOUBLE | 0.007 | no |
| SLGAM00: Coefficient of the length dependence of GAM00 (m2) | DOUBLE | 1.1e-14 | no |
| SL2GAM00: Second coefficient of the length dependence of GAM00 (-) | DOUBLE | 0 | no |
| ETAGAMR: Exponent of the back-bias dependence of GAM0 for the reference transistor (-) | DOUBLE | 1 | no |
| M0R: Factor of the subthreshold slope for the reference transistor at the reference temperature (-) | DOUBLE | 0.375 | no |
| STM0: Coefficient of the temperature dependence of m0 (K-1) | DOUBLE | 0 | no |
| SLM0: Coefficient of the length dependence of m0 (m1/2) | DOUBLE | 4.7e-05 | no |
| ETAMR: Exponent of the back-bias dependence of m for the reference transistor (-) | DOUBLE | 1 | no |
| ZET1R: Weak-inversion correction factor for the reference transistor (-) | DOUBLE | 1.3 | no |
| ETAZET: Exponent of the length dependence of ZET1 (-) | DOUBLE | 0.03 | no |
| SLZET1: Coefficient of the length dependence of ZET1 (mETAZET) | DOUBLE | -2.8 | no |
| VSBTR: Limiting voltage of the VSB dependence of m and GAM0 for the reference transistor (V) | DOUBLE | 100 | no |
| SLVSBT: Coefficient of the length dependence of VSBT (Vm) | DOUBLE | 0 | no |
| A1R: Factor of the weak-avalanche current for the reference transistor at the reference temperature (-) | DOUBLE | 10 | no |
| STA1: Coefficient of the temperature dependence of a1 (K-1) | DOUBLE | 0 | no |
| SLA1: Coefficient of the length dependence of a1 (m) | DOUBLE | -1.5e-05 | no |
| SWA1: Coefficient of the width dependence of a1 (m) | DOUBLE | 3e-05 | no |
| A2R: Exponent of the weak-avalanche current for the reference transistor (V) | DOUBLE | 59 | no |
| SLA2: Coefficient of the length dependence of a2 (Vm) | DOUBLE | -8e-06 | no |
| SWA2: Coefficient of the width dependence of a2 (Vm) | DOUBLE | 1.5e-05 | no |
| A3R: Factor of the drain-source voltage above which weak-avalanche occurs, for the reference transistor (-) | DOUBLE | 0.52 | no |
| SLA3: Coefficient of the length dependence of a3 (m) | DOUBLE | -4.5e-07 | no |
| SWA3: Coefficient of the width dependence of a3 (m) | DOUBLE | -1.4e-07 | no |
| COL: Gate overlap capacitance per unit channel width (Fm-1) | DOUBLE | 3.2e-10 | no |
| NTR: Coefficient of the thermal noise for the reference transistor (J) | DOUBLE | 2.11e-20 | no |
| NFR: Flicker noise coefficient of the reference transistor (for NFMOD = 0) (V2) | DOUBLE | -2.14e-11 | no |
| NFAR: First coefficient of the flicker noise of the reference transistor (for NFMOD = 1) (V-1m-4) | DOUBLE | 1.53e+22 | no |
| NFBR: Second coefficient of the flicker noise of the reference transistor (for NFMOD = 1) (V-1m-2) | DOUBLE | 4.06e+06 | no |
| NFCR: Third coefficient of the flicker noise of the reference transistor (for NFMOD = 1) ()V-1 | DOUBLE | 2.92e-10 | no |
| l: Drawn channel length in the lay-out of the actual transistor (m) | DOUBLE | 1.5e-06 | no |
| w: Drawn channel width in the lay-out of the actual transistor (m) | DOUBLE | 2e-05 | no |
| DTA: Temperature offset of the device with respect to TA (0C) | DOUBLE | 0 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09