mosp3 |
Intrinsic Mosfet model level 3 |
|---|
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Author(s): Nikhil Kriplani| Parameter | Type | Default value | Required? |
|---|---|---|---|
| GAMMA: Bulk threshold parameter (V^1/2) | DOUBLE | 0 | no |
| KP: transconductance parameter (A/V^2) | DOUBLE | 2.1e-05 | no |
| LD: Lateral diffusion (m) | DOUBLE | 0 | no |
| NSUB: Substrate doping (1/m^3) | DOUBLE | 0 | no |
| PHI: Surface inversion potential (V) | DOUBLE | 0.6 | no |
| TOX: Oxide thickness (m) | DOUBLE | 1e-07 | no |
| U0: Surface mobility (cm^2/V-s) | DOUBLE | 600 | no |
| VT0: Zero-bias threshold voltage (V) | DOUBLE | 0 | no |
| WD: Lateral diffusion width (m) | DOUBLE | 0 | no |
| W: Channel width (m) | DOUBLE | 5e-05 | no |
| L: Channel length (m) | DOUBLE | 2e-06 | no |
| T: Temperature of device (K) | DOUBLE | 300.15 | no |
| TNOM: Nominal temperature (K) | DOUBLE | 300.15 | no |
| NFS: Fast surface state density (cm^-2) | DOUBLE | 0 | no |
| ETA: Static feedback on threshold voltage | DOUBLE | 0 | no |
| THETA: Mobility modulation (1/V) | DOUBLE | 0 | no |
| VMAX: Maximum drift velocity of carriers (m/sec) | DOUBLE | 0 | no |
| XJ: Metallurgical junction depth (m) | DOUBLE | 0 | no |
| DELTA: Width effect on threshold voltage | DOUBLE | 0 | no |
| NSS: Surface state density (1/cm^2) | DOUBLE | 0 | no |
| TPG: Type of gate material | DOUBLE | 0 | no |
| KAPPA: Saturation field factor | DOUBLE | 0.2 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09