mosp2 |
Level 2 Grove-Frohman Model |
|---|
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Author(s): Aaron Walker| Parameter | Type | Default value | Required? |
|---|---|---|---|
| vt0: Zero-bias threshold voltage (V) | DOUBLE | 0 | no |
| kp: Transconductance parameter (A/V^2) | DOUBLE | 2e-05 | no |
| gamma: Bulk threshold parameter (V^1/2) | DOUBLE | 0 | no |
| phi: Surface inversion potential (V) | DOUBLE | 0.6 | no |
| lambda: Channel-length modulation (1/V) | DOUBLE | 0 | no |
| rd: Drain ohmic resistance | DOUBLE | 0 | no |
| rs: Source ohmic resistance | DOUBLE | 0 | no |
| is: Bulk junction saturation current | DOUBLE | 1e-14 | no |
| pb: Bulk junction potential | DOUBLE | 0.8 | no |
| js: Bulk junction saturation current density | DOUBLE | 0 | no |
| tox: Oxide thickness (m) | DOUBLE | 1e-07 | no |
| ld: Lateral diffusion (m) | DOUBLE | 0 | no |
| u0: Surface mobility (cm^2/V-s) | DOUBLE | 600 | no |
| fc: Forward bias junction fit parameter | DOUBLE | 0.5 | no |
| nsub: Substrate doping (1/cm^3) | DOUBLE | 1e+15 | no |
| tpg: Type of gate material | DOUBLE | 1 | no |
| nss: Surface state density. | DOUBLE | 0 | no |
| delta: Width effect on threshold | DOUBLE | 0 | no |
| uexp: Crit. field exp for mob. deg. | DOUBLE | 0 | no |
| ucrit: Crit. field for mob. degradation | DOUBLE | 10000 | no |
| vmax: Maximum carrier drift velocity | DOUBLE | 0 | no |
| xj: Junction depth | DOUBLE | 0 | no |
| neff: Total channel charge coeff. | DOUBLE | 1 | no |
| nfs: Fast surface state density | DOUBLE | 0 | no |
| tnom: Nominal device temperature (C) | DOUBLE | 27 | no |
| kf: Flicker noise coefficient | DOUBLE | 0 | no |
| af: Flicker noise exponent | DOUBLE | 1 | no |
| t: Device temperature (C) | DOUBLE | 27 | no |
| l: Gate length (m) | DOUBLE | 2e-06 | no |
| w: Gate width (m) | DOUBLE | 5e-05 | no |
| alpha: Impact ionization current coefficient (1/V) | DOUBLE | 0 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09