mosntftq

a-Si TFT MODEl


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Author(s): ECe718 Class Project

Usage:

Parameter TypeDefault value Required?
l: Channel length (m) DOUBLE 5.5e-06 no
w: Channel width (m) DOUBLE 8e-05 no
u: Surface mobility (cm^2/V-s) DOUBLE 1.2e-05 no
vto: Zero-bias threshold voltage (V) DOUBLE 3.2 no
tts: Device temperature (K) DOUBLE 232 no
ctr: Mobility modulation (V^-1) DOUBLE 0.06 no
rd: Static feedback on threshold voltage (V^-1) DOUBLE 83000 no
vthm: Saturated velocity (m/sec) DOUBLE 4.2 no
beta: Conductance (ohm-1) DOUBLE 3 no
roff: Coefficient of drain leakage DOUBLE 4e+15 no
cgso: Gate-source capacitance (F) DOUBLE 8e-14 no
cgdo: Gate-drain capacitance (F) DOUBLE 8e-14 no
cl: Maximum space-charge capacitance (F/m^2) DOUBLE 0.0004 no
lambda: signal frequency (Hz) DOUBLE 450 no
rs: Frequenct effect compensation DOUBLE 83000 no
tnom: Frequenct effect compensation DOUBLE 300.15 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09