mosntftq |
a-Si TFT MODEl |
|---|
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Author(s): ECe718 Class Project| Parameter | Type | Default value | Required? |
|---|---|---|---|
| l: Channel length (m) | DOUBLE | 5.5e-06 | no |
| w: Channel width (m) | DOUBLE | 8e-05 | no |
| u: Surface mobility (cm^2/V-s) | DOUBLE | 1.2e-05 | no |
| vto: Zero-bias threshold voltage (V) | DOUBLE | 3.2 | no |
| tts: Device temperature (K) | DOUBLE | 232 | no |
| ctr: Mobility modulation (V^-1) | DOUBLE | 0.06 | no |
| rd: Static feedback on threshold voltage (V^-1) | DOUBLE | 83000 | no |
| vthm: Saturated velocity (m/sec) | DOUBLE | 4.2 | no |
| beta: Conductance (ohm-1) | DOUBLE | 3 | no |
| roff: Coefficient of drain leakage | DOUBLE | 4e+15 | no |
| cgso: Gate-source capacitance (F) | DOUBLE | 8e-14 | no |
| cgdo: Gate-drain capacitance (F) | DOUBLE | 8e-14 | no |
| cl: Maximum space-charge capacitance (F/m^2) | DOUBLE | 0.0004 | no |
| lambda: signal frequency (Hz) | DOUBLE | 450 | no |
| rs: Frequenct effect compensation | DOUBLE | 83000 | no |
| tnom: Frequenct effect compensation | DOUBLE | 300.15 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09