mosntft

HP a-Si Mosfet model level 16


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Author(s): ECE718 Class Project

Usage:

Parameter TypeDefault value Required?
L: Channel length (m) DOUBLE 1.1e-05 no
LD: Lateral diffusion (m) DOUBLE 0 no
W: Channel width (m) DOUBLE 4.1e-05 no
WD: Lateral diffusion width (m) DOUBLE 0 no
U0: Surface mobility (cm^2/V-s) DOUBLE 0.45 no
VT0: Zero-bias threshold voltage (V) DOUBLE 1.699 no
PHI: Surface inversion potential (V) DOUBLE 0.62 no
NFS: Fast surface state density (cm^-2) DOUBLE 1.925e+21 no
NSS: Surface state density (cm^-2) DOUBLE 0 no
T1: Film Thickness (m) DOUBLE 3e-07 no
T2: Film Thickness (m) DOUBLE 0 no
E1: Dielectric constant of film1 DOUBLE 3.9 no
E2: Dieleectric constant of film2 DOUBLE 0 no
THETA: Mobility modulation (V^-1) DOUBLE 0.0178 no
ETA: Static feedback on threshold voltage (V^-1) DOUBLE 0.0004108 no
VMAX: Saturated velocity (m/sec) DOUBLE 2783 no
G0: Conductance (ohm-1) DOUBLE 9.728e-15 no
DEFF: Coefficient of drain leakage DOUBLE 1.968 no
VX: potential (V) DOUBLE 0.033 no
TVST: Voltage supply time (sec) DOUBLE 0.1 no
PSI: temperature exponential part DOUBLE 0.2 no
GAMMA: first order temperature gradient DOUBLE 0.008 no
VTIME: voltage stress (sec) DOUBLE 0.01 no
TREF: Nominal temperature (K) DOUBLE 1.5 no
T: Device temperature (K) DOUBLE 300.15 no
RD: Drain resistance (ohm) DOUBLE 8030 no
RS: Source resistance (ohm) DOUBLE 8030 no
CGS0: Gate-source capacitance (F) DOUBLE 4.203e-14 no
CGD0: Gate-drain capacitance (F) DOUBLE 5.221e-14 no
CSC: Maximum space-charge capacitance (F/m^2) DOUBLE 0.0001588 no
FREQ: signal frequency (Hz) DOUBLE 100000 no
FEFF: Frequenct effect compensation DOUBLE 0.5 no
TAU: Relaxation time constant (sec) DOUBLE 1.07e-08 no
NU: First Order temperature gradient DOUBLE 0 no
CHI: Temperature exponential part DOUBLE 0.5 no
K2: Temperature exponential part DOUBLE 2 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09