mosnldmet |
MET LDMOS |
|---|
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Author(s): Jiankai Chang/Jason Thurston| Parameter | Type | Default value | Required? |
|---|---|---|---|
| rg_0: Gate Resistance Evaluated at Tnom | DOUBLE | 1 | no |
| rg_1: Gate Resistance Coefficient | DOUBLE | 0.001 | no |
| rs_0: Source Resistance Evaluated at Tnom | DOUBLE | 0.1 | no |
| rs_1: Source Resistance Coefficient | DOUBLE | 0.0001 | no |
| rd_0: Drain Resistance Evaluated at Tnom | DOUBLE | 1.5 | no |
| rd_1: Drain Resistance Coefficient | DOUBLE | 0.0015 | no |
| vtO_0: Forward Threshold Voltage Evaluated at Tnom | DOUBLE | 3.5 | no |
| vtO_1: Forward Threshold Voltage Coefficient | DOUBLE | -0.001 | no |
| gamma: IDS Equation Coefficient | DOUBLE | -0.02 | no |
| vst: Sub-Threshold Slope Coefficient | DOUBLE | 0.15 | no |
| beta_0: IDS Equation Coefficient. BETA Evaluated at Tnom | DOUBLE | 0.2 | no |
| beta_1: IDS Equation Coefficient | DOUBLE | -0.0002 | no |
| lambda: IDS Equation Coefficient | DOUBLE | -0.0025 | no |
| vgexp: IDS Equation Coefficient | DOUBLE | 1.1 | no |
| alpha: IDS Equation Coefficient | DOUBLE | 1.5 | no |
| vk: IDS Equation Coefficient | DOUBLE | 7 | no |
| delta: IDS Equation Coefficient | DOUBLE | 0.9 | no |
| vbr_0: Breakdown Voltage Evaluated at Tnom | DOUBLE | 75 | no |
| vbr_1: Breakdown Coefficient @ Vgs=0V | DOUBLE | 0.01 | no |
| k1: Breakdown Parameter | DOUBLE | 1.5 | no |
| k2: Breakdown Parameter | DOUBLE | 1.15 | no |
| m1: Breakdown Parameter | DOUBLE | 9.5 | no |
| m2: Breakdown Parameter | DOUBLE | 1.2 | no |
| m3: Breakdown Parameter | DOUBLE | 0.001 | no |
| br: Reverse IDS Equation Coefficient | DOUBLE | 0.5 | no |
| rdiode_0: Reverse Diode Series Resistance Evaluated at Tnom | DOUBLE | 0.5 | no |
| rdiode_1: Reverse Diode Series Resistance Coefficient | DOUBLE | 0.001 | no |
| isr: Reverse Diode Leakage Current | DOUBLE | 1e-13 | no |
| nr: Reverse Diode Ideality Factor | DOUBLE | 1 | no |
| vtO_r: Reverse Threshold Voltage Coefficient | DOUBLE | 3 | no |
| rth: Thermal Resistance Coefficient | DOUBLE | 10 | no |
| ggs: Gate To Source Conductance | DOUBLE | 100000 | no |
| ggd: Gate to Drain Conductance | DOUBLE | 100000 | no |
| tau: Transit Time Under Gate | DOUBLE | 1e-12 | no |
| tnom: Temperature at Which Model Parameters are Extracted | DOUBLE | 298 | no |
| tsnk: Heat Sink Temp. | DOUBLE | 25 | no |
| cgst: Cgs Temperature Coefficient | DOUBLE | 0.001 | no |
| cdst: Cds Temperature Coefficient | DOUBLE | 0.001 | no |
| cgdt: Cgd Temperature Coefficient | DOUBLE | 0 | no |
| cth: Thermal Capacitance | DOUBLE | 0 | no |
| kf: Flicker Noise Coefficient | DOUBLE | 0 | no |
| af: Flicker Noise Exponent | DOUBLE | 1 | no |
| ffe: Flicker Noise Frequency Exponent | DOUBLE | 1 | no |
| n: Forward Diode Ideality Factor | DOUBLE | 1 | no |
| iss: Forward Diode Leakage Current | DOUBLE | 1e-13 | no |
| cgs1: Cgs Equation Coefficient | DOUBLE | 2e-12 | no |
| cgs2: Cgs Equation Coefficient | DOUBLE | 1e-12 | no |
| cgs3: Cgs Equation Coefficient | DOUBLE | -4 | no |
| cgs4: Cgs Equation Coefficient | DOUBLE | 1e-12 | no |
| cgs5: Cgs Equation Coefficient | DOUBLE | 0.25 | no |
| cgs6: Cgs Equation Coefficient | DOUBLE | 3.5 | no |
| cgd1: Cgd Equation Coefficient | DOUBLE | 4e-13 | no |
| cgd2: Cgd Equation Coefficient | DOUBLE | 1e-13 | no |
| cgd3: Cgd Equation Coefficient | DOUBLE | 0.1 | no |
| cgd4: Cgd Equation Coefficient | DOUBLE | 4 | no |
| cds1: Cds Equation Coefficient | DOUBLE | 1e-12 | no |
| cds2: Cds Equation Coefficient | DOUBLE | 1.5e-12 | no |
| cds3: Cds Equation Coefficient | DOUBLE | 0.1 | no |
| area: Gate Periphery Scaling Parameter | DOUBLE | 1 | no |
| n_fing: Gate Finger Scaling Parameter | DOUBLE | 1 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09