mosnbsim4 |
MOSFET using BSIM4 model |
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Author(s): Nikhil Kriplani| Parameter | Type | Default value | Required? |
|---|---|---|---|
| TOXE: Electrical gate equivalent oxide thickness | DOUBLE | 3e-09 | no |
| TOXP: Physical gate equivalent oxide thickness | DOUBLE | 3e-09 | no |
| EPSROX: Gate dielectric constant relative to vacuum | DOUBLE | 3.9 | no |
| VFB: Flat-band voltage | DOUBLE | -1 | no |
| VTH0: Long-channel threshold voltage | DOUBLE | 0.7 | no |
| NGATE: Poly Si gate doping concentration | DOUBLE | 0 | no |
| XL: Channel length offset due to mask/etch effect | DOUBLE | 0 | no |
| XW: Channel width offset due to mask/etch effect | DOUBLE | 0 | no |
| NF: Number of device fingers | DOUBLE | 1 | no |
| W: Width of the device | DOUBLE | 5e-06 | no |
| L: Length of the device | DOUBLE | 5e-06 | no |
| DWG: Coefficient of gate bias dependence of Weff | DOUBLE | 0 | no |
| DWB: Coefficient of body bias dependence of Weff | DOUBLE | 0 | no |
| WINT: Channel-width offset parameter | DOUBLE | 0 | no |
| WLN: Power of length dependence of width offset | DOUBLE | 1 | no |
| WL: Coefficient of length dependence for width offset | DOUBLE | 0 | no |
| WWN: Power of width dependence of width offset | DOUBLE | 1 | no |
| WW: Coefficient of width dependence for width offset | DOUBLE | 0 | no |
| WWL: Coefficient of length and width cross term dependence for width offset | DOUBLE | 0 | no |
| LINT: Channel-length offset parameter | DOUBLE | 0 | no |
| LLN: Power of length dependence for length offset | DOUBLE | 1 | no |
| LL: Coefficient of length dependence for length offset | DOUBLE | 0 | no |
| LW: Coefficient of width dependence for length offset | DOUBLE | 0 | no |
| LWN: Power of width dependence for length offset | DOUBLE | 1 | no |
| LWL: Coefficient of length and width cross term dependence for length offset | DOUBLE | 0 | no |
| K1: First-order body bias coefficient | DOUBLE | 0.53 | no |
| K2: Second-order body bias coefficient | DOUBLE | -0.0186 | no |
| LPEB: Lateral non-uniform doping effect on K1 | DOUBLE | 0 | no |
| LPE0: Lateral non-uniform doping parameter at Vbs=0 | DOUBLE | 1.74e-07 | no |
| K3: Narrow width coefficient | DOUBLE | 80 | no |
| K3B: Body effect coefficient of K3 | DOUBLE | 0 | no |
| W0: Narrow width parameter | DOUBLE | 2.5e-06 | no |
| DVT0W: First coefficient of narrow width effect on Vth for small channel length | DOUBLE | 0 | no |
| DVT0: First coefficient of short-channel effect on Vth | DOUBLE | 2.2 | no |
| DVT1W: Second coefficient of narrow width effect on Vth for small channel length | DOUBLE | 5.3e+06 | no |
| DVT1: Second coefficient of short-channel effect on Vth | DOUBLE | 0.53 | no |
| DSUB: DIBL coefficient exponent in sub-threshold region | DOUBLE | 0.56 | no |
| ETA0: DIBL coefficient in sub-threshold region | DOUBLE | 0.08 | no |
| ETAB: Body-bias coefficient for the sub-threshold region | DOUBLE | -0.07 | no |
| TOXM: Tox at which parameters are extracted | DOUBLE | 3e-09 | no |
| T: Temperature | DOUBLE | 300 | no |
| NDEP: Channel doping concentration at depletion edge for zero body bias | DOUBLE | 1.7e+17 | no |
| PHIN: Non-uniform vertical doping effect on surface potential | DOUBLE | 0 | no |
| VBM: Maximum applied body bias in VTH0 calculation | DOUBLE | -3 | no |
| NSUB: Substrate doping concentration | DOUBLE | 6e+16 | no |
| DVT2W: Body-bias coefficient of narrow width effect for small channel length | DOUBLE | -0.032 | no |
| NSD: Source/drain doping concentration fatal error if not positive | DOUBLE | 1e+20 | no |
| DVT2: Body-bias coefficient of short-channel effect on Vth | DOUBLE | -0.032 | no |
| MINV: Vgsteff fitting parameter for moderate inversion condition | DOUBLE | 0 | no |
| NFACTOR: Subthreshold swing factor | DOUBLE | 1 | no |
| CDSC: Coupling capacitance between source/drain and channel | DOUBLE | 0.00024 | no |
| CDSCD: Drain-bias sensitivity of CDSC | DOUBLE | 0 | no |
| CDSCB: Body-bias sensitivity of CDSC | DOUBLE | 0 | no |
| CIT: Interface trap capacitance | DOUBLE | 0 | no |
| KETA: Body-bias coefficient of bulk charge effect | DOUBLE | -0.047 | no |
| B0: Bulk charge effect coefficient for channel width | DOUBLE | 0 | no |
| B1: Bulk charge effect width offset | DOUBLE | 0 | no |
| A0: Coefficient of channel-length dependence bulk charge effect | DOUBLE | 1 | no |
| AGS: Coefficient of Vgs dependence of bulk charge effect | DOUBLE | 0 | no |
| XJ: S/D junction depth | DOUBLE | 1.5e-07 | no |
| U0: Low-field mobility | DOUBLE | 0.067 | no |
| UA: Coefficient of first-order mobility degradation due to vertical field | DOUBLE | 1e-15 | no |
| UB: Coefficient of second-order mobility degradation due to vertical field | DOUBLE | 1e-19 | no |
| UC: Coefficient of mobility degradation due to body-bias effect | DOUBLE | -4.65e-11 | no |
| EU: Exponent for mobility degradation | DOUBLE | 1.67 | no |
| DELTA: Parameter for DC Vdseff | DOUBLE | 0.01 | no |
| PDITS: Impact of drain-induced Vth shift on Rout | DOUBLE | 0 | no |
| FPROUT: Effect of pocket implant on Rout degradation | DOUBLE | 0 | no |
| PDITSL: Channel-length dependence of drain-induced Vth shift for Rout | DOUBLE | 0 | no |
| PDITSD: Vds dependence of drain-induced Vth shift for Rout | DOUBLE | 0 | no |
| PSCBE2: Second substrate current induced body-effect parameter | DOUBLE | 1e-05 | no |
| PSCBE1: First substrate current induced body-effect parameter | DOUBLE | 4.24e+08 | no |
| PDIBLCB: Body bias coefficient of DIBL effect on Rout | DOUBLE | 0 | no |
| PVAG: Gate-bias dependence of Early voltage | DOUBLE | 0 | no |
| PDIBL1: Parameter for DIBL effect on Rout | DOUBLE | 0 | no |
| PDIBL2: Parameter for DIBL effect on Rout | DOUBLE | 0 | no |
| DROUT: Channel-length dependence of DIBL effect on Rout | DOUBLE | 0.56 | no |
| PCLM: Channel length modulation parameter | DOUBLE | 1.3 | no |
| A1: First non-saturation effect parameter | DOUBLE | 0 | no |
| A2: Second non-saturation factor | DOUBLE | 1 | no |
| RDSWMIN: Lightly-doped drain resistance per unit width at high Vgs and zero Vbs | DOUBLE | 0 | no |
| RDSW: Zero bias lightly-doped drain resistance per unit width | DOUBLE | 200 | no |
| PRWG: Gate-bias dependence of LDD resistance | DOUBLE | 1 | no |
| PRWB: Body-bias dependence of LDD resistance | DOUBLE | 0 | no |
| WR: Channel-width dependence parameter of LDD resistance | DOUBLE | 1 | no |
| WLC: Coefficient of length dependence for CV channel width offset | DOUBLE | 0 | no |
| WWC: Coefficient of width dependence for CV channel width offset | DOUBLE | 0 | no |
| WWLC: Coefficient of length and width crossterm dependence for CV channel width offset | DOUBLE | 0 | no |
| DWJ: Offset of the S/D junction width | DOUBLE | 0 | no |
| CLC: Constant term for the short channel model | DOUBLE | 1e-07 | no |
| CLE: Exponential term for the short channel model | DOUBLE | 0.6 | no |
| NOFF: CV parameter in VgsteffCV for weak to strong inversion | DOUBLE | 1 | no |
| VOFFCV: CV parameter in VgsteffCV for weak to strong inversion | DOUBLE | 0 | no |
| CF: Fringing field capacitance | DOUBLE | 1.08e-10 | no |
| CKAPPAD: Coefficient of bias-dependent overlap capacitance for the drain side | DOUBLE | 0.6 | no |
| CKAPPAS: Coefficient of bias-dependent overlap capacitance for the source side | DOUBLE | 0.6 | no |
| LLC: Coefficient of length dependence on CV channel length offset | DOUBLE | 0 | no |
| LWC: Coefficient of width dependence on CV channel length offset | DOUBLE | 0 | no |
| LWLC: Coefficient of length and width cross term dependence on CV channel length offset | DOUBLE | 0 | no |
| WWLC: Coefficient of length and width cross term dependence on CV channel width offset | DOUBLE | 0 | no |
| VOFF: Offset voltage in the subthreshold region for large W and L | DOUBLE | -0.08 | no |
| VOFFL: Channel length dependence of VOFF | DOUBLE | 0 | no |
| POXEDGE: Factor for the gate oxide thickness in the S/D overlap regions | DOUBLE | 1 | no |
| TOXREF: Nominal gate oxide thickness for gate dielectric tunneling current model | DOUBLE | 3e-09 | no |
| NTOX: Exponent for the gate oxide ratio | DOUBLE | 1 | no |
| DLCIG: Source/drain overlap length for Igs and Igd | DOUBLE | 0 | no |
| AIGSD: parameter for Igs and Igd | DOUBLE | 0.43 | no |
| BIGSD: parameter for Igs and Igd | DOUBLE | 0.054 | no |
| CIGSD: parameter for Igs and Igd | DOUBLE | 0.075 | no |
| MOIN: Coefficient for gate-bias dependent surface potential | DOUBLE | 15 | no |
| VSAT: Saturation velocity | DOUBLE | 80000 | no |
| PDITSD: Vds dependence of drain-induced Vth shift for Rout | DOUBLE | 0 | no |
| AIGC: Parameter for Igcs and Igcd | DOUBLE | 0.43 | no |
| BIGC: Parameter for Igcs and Igcd | DOUBLE | 0.054 | no |
| CIGC: Parameter for Igcs and Igcd | DOUBLE | 0.075 | no |
| NIGC: Parameter for Igcs, Igcd, Igs and Igd | DOUBLE | 1 | no |
| PIGCD: Vds dependence of Igcs and Igcd | DOUBLE | 1 | no |
| DVTP0: First coefficient of drain induced Vth shift due to long channel pocket devices | DOUBLE | 0 | no |
| DVTP1: First coefficient of drain induced Vth shift due to long channel pocket devices | DOUBLE | 0 | no |
| PRT: Temperature coefficient for RDSW | DOUBLE | 0 | no |
| AT: Temperature cpefficient for saturation velocity | DOUBLE | 33000 | no |
| XT: Doping Depth | DOUBLE | 1.55e-07 | no |
| ALPHA0: First parameter of impact ionization current | DOUBLE | 0 | no |
| ALPHA1: Isub parameter for length scaling | DOUBLE | 0 | no |
| BETA0: Second parameter of impact ionization current | DOUBLE | 30 | no |
| AGIDL: Pre-exponential coefficient for GIDL | DOUBLE | 0 | no |
| BGIDL: Exponential coefficient for GIDL | DOUBLE | 2.3e+09 | no |
| CGIDL: Parameter for body-bias effect on GIDL | DOUBLE | 0.5 | no |
| EGIDL: Fitting parameter for band-bending for GIDL | DOUBLE | 0.8 | no |
| ACDE: Exponential coefficient for charge thickness | DOUBLE | 1 | no |
| DLC: Channel length offset parameter | DOUBLE | 0 | no |
| DWC: Channel width offset parameter | DOUBLE | 0 | no |
| AIGBACC: Parameter for Igb in accumulation | DOUBLE | 0.43 | no |
| BIGBACC: Parameter for Igb in accumulation | DOUBLE | 0.054 | no |
| CIGBACC: Parameter for Igb in accumulation | DOUBLE | 0.075 | no |
| NIGBACC: Parameter for Igb in accumulation | DOUBLE | 1 | no |
| AIGBINV: Parameter for Igb in inversion | DOUBLE | 0.35 | no |
| BIGBINV: Parameter for Igb in inversion | DOUBLE | 0.03 | no |
| CIGBINV: Parameter for Igb in inversion | DOUBLE | 0.006 | no |
| EIGBINV: Parameter for Igb in inversion | DOUBLE | 1.1 | no |
| NIGBINV: Parameter for Igb in inversion | DOUBLE | 3 | no |
| KT1: Temperature coefficient for threshold voltage | DOUBLE | -0.11 | no |
| KT1l: Channel Length dependence of KT1 | DOUBLE | 0 | no |
| KT2: Body-bias coefficient of Vth with temperature effects | DOUBLE | 0.022 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09