mosnbsim3soi5t1

Mosfet model using Mosnbsim3SOI5T1 level, version 3.2.4

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Author(s): Ramya Mohan
  • Number of terminals for this element is variable.


    • Usage:

    Parameter TypeDefault value Required?
    l: Length (m) DOUBLE 2.5e-07 no
    w: Width (m) DOUBLE 1e-05 no
    dtoxcv: --- DOUBLE 0 no
    llc: Length reduction parameter for CV DOUBLE 0 no
    lwc: Length reduction parameter for CV DOUBLE 0 no
    lwlc: Length reduction parameter for CV DOUBLE 0 no
    wlc: Width reduction parameter for CV DOUBLE 0 no
    wwc: Width reduction parameter for CV DOUBLE 0 no
    wwlc: Width reduction parameter for CV DOUBLE 0 no
    tsi: Silicon film thickness (m) DOUBLE 1e-07 no
    tox: Gate oxide thickness (m) DOUBLE 5e-09 no
    toxref: --Target Oxide Thickness DOUBLE 5e-09 no
    tbox: Buried Oxide thickness (m) DOUBLE 5e-07 no
    tnom: Parameter measurement temperature (K) DOUBLE 293.15 no
    rbody: Intrinsic body contact sheet resistance (ohm/square) DOUBLE 1 no
    rbsh: Extrinsic body contact sheet resistance (ohm/square) DOUBLE 0 no
    rsh: S-D sheet resistancde (ohm/square) DOUBLE 0 no
    rhalo: Body halo sheet resistance (ohm/m) DOUBLE 1e+15 no
    wint: Width offset fitting parameter from I-V without bias (m) DOUBLE 0 no
    lint: Length offset fitting parameter from I-V without bias (m) DOUBLE 0 no
    wth0: ----- DOUBLE 0 no
    ll: Length reduction parameter DOUBLE 0 no
    wl: Width reduction parameter DOUBLE 0 no
    lln: Length reduction parameter DOUBLE 1 no
    wln: Width reduction parameter DOUBLE 1 no
    lw: Length reduction parameter DOUBLE 0 no
    ww: Width reduction parameter DOUBLE 0 no
    lwn: Length reduction parameter DOUBLE 1 no
    wwn: Width reduction parameter DOUBLE 1 no
    lwl: Length reduction parameter DOUBLE 0 no
    wwl: Width reduction parameter DOUBLE 0 no
    ln: Electron/hole diffusion length (m) DOUBLE 2e-06 no
    xpart: -----Channel charge partititoning DOUBLE 1 no
    xj: S/DJunction depth (m) DOUBLE 1e-07 no
    k1b: k1b DOUBLE 0 no
    k2b: k2b DOUBLE 0 no
    dk2b: dk2b DOUBLE 0 no
    vbsa: vbsa DOUBLE 0 no
    aigc: --- DOUBLE 1 no
    bigc: ---- DOUBLE 1 no
    cigc: ----- DOUBLE 1 no
    aigsd: ----- DOUBLE 1 no
    bigsd: ----- DOUBLE 1 no
    cigsd: ----- DOUBLE 1 no
    nigc: ------- DOUBLE 1 no
    poxedge: ----- DOUBLE 1 no
    pigcd: ------- DOUBLE 1 no
    vth0: Threshold voltage @Vbs=0 for long and wide device DOUBLE 0.53 no
    k1: First order body effect coefficient (V^0.5) DOUBLE 0.56 no
    k1w1: First body effect width dependent parameter (m) DOUBLE 0 no
    k1w2: Second body effect width dependent parameter (m) DOUBLE 0 no
    k2: Second order body effect coefficient DOUBLE 0 no
    k3: Narrow width effect coefficient DOUBLE -2 no
    k3b: Body effect coefficient of k3 (1/V) DOUBLE 0 no
    kb1: Backgate body charge coefficient DOUBLE 1 no
    w0: Narrow width effect parameter (m) DOUBLE 0 no
    nlx: Lateral non-uniform doping parameter (m) DOUBLE 0 no
    nch: Channel doping concentration (1/cm^3) DOUBLE 8e+17 no
    nsub: Substrate doping concentration (1/cm^3) DOUBLE 5e+15 no
    ngate: Poly-gate doping concentration (1/cm^3) DOUBLE 2e+20 no
    dvt0: First coefficient of short-channel effect on Vth DOUBLE 1 no
    dvt1: Second coefficient of short-channel effect on Vth DOUBLE 0.15 no
    dvt2: Body-bias coefficient of short-channel effect on Vth (1/V) DOUBLE 0 no
    dvt0w: First coefficient of narrow width effect on Vth for small channel length DOUBLE 0 no
    dvt1w: Second coefficient of narrow width effect on Vth for small channel length DOUBLE 2e+06 no
    dvt2w: Body-bias coefficient of narrow width effect on Vth for small channel length (1/V) DOUBLE -0.032 no
    eta0: DIBL coefficeint subthreshold region DOUBLE 0.5 no
    etab: Body bias coefficeint for the subthreshold DIBL effect (1/V) DOUBLE 0 no
    dsub: DIBL coefficient in the subthreshold region DOUBLE 0.35 no
    voff: Offset voltage in the threshold region for large W and L (V) DOUBLE -0.15 no
    nfactor: Subthreshold swing factor DOUBLE 0.4 no
    cdsc: Drain/Source to channel coupling capacitance (F/m^2) DOUBLE 0.005 no
    cdscb: Body-bias sensitivity of cdsc (F/m^2) DOUBLE -0.01 no
    cdscd: Drain-bias sensitivity of cdsc (F/m^2) DOUBLE 0 no
    cit: Interface trap capacitance (F/m^2) DOUBLE 0 no
    u0: Mobility at Temp=Tnom (cm^2/V-sec) DOUBLE 0.05 no
    ua: First-oreder mobility degradation coefficient (m/V) DOUBLE 0 no
    ub: Second-order mobility degradation coefficient (m/V)^2 DOUBLE 1.2e-18 no
    uc: Body-effect of mobility degradation coefficient (1/V) DOUBLE 0 no
    prwg: Gate-bias effect coefficient of rdsw DOUBLE 0 no
    prwb: Body effect coefficient of rdsw (1/V) DOUBLE 0 no
    wr: Width offset from Weff for Rds calculation DOUBLE 1 no
    rdsw: Parasitic resistance per unit width (ohm-um) DOUBLE 100 no
    a0: Bulk charge effect coefficient for channel length DOUBLE 0 no
    ags: Gate bias coefficient of Abulk (1/V) DOUBLE 0 no
    a1: First non-saturation effect parameter (1/V) DOUBLE 0 no
    a2: Second non-saturation effect parameter DOUBLE 0.99 no
    b0: Bulk charge effect coefficient for channel width (m) DOUBLE 0 no
    b1: Bulk charge effect width offset (m) DOUBLE 0 no
    vsat: Saturation velocity at Temp=Tnom (m/sec) DOUBLE 80000 no
    keta: Body-bias coefficient of bulk charge effect (1/V) DOUBLE 0 no
    ketas: Surface potential adjustment for bulk charge effect (V) DOUBLE 0 no
    dwg: Coefficient of Weff's gate dependence (m/V) DOUBLE 0 no
    dwb: Coefficient of Weff's substrate body bias dependence (m/V)^0.5 DOUBLE 0 no
    dwbc: Width offset for body contact isolation edge (m) DOUBLE 0 no
    pclm: Channel length modulation parameter DOUBLE 1 no
    pdibl1: First output resistance DIBL effect correction parameter DOUBLE 0.1 no
    pdibl2: Second output resistance DIBL effect correction parameter DOUBLE 0 no
    pdiblb: Body-effect on drain induced barrier lowering DOUBLE 0 no
    drout: ----listed in the pgm DOUBLE 0.4 no
    pvag: Gate dependence of Early voltage DOUBLE 0 no
    delta: Effective Vds parameter DOUBLE 0.001 no
    alpha0: The first parameter of impact ionization current (m/V) DOUBLE 8e-09 no
    beta0: First Vds dependent parameter of impact ionization current (1/V) DOUBLE 0 no
    beta1: Second Vds dependent parameter of impact ionization current DOUBLE 0 no
    beta2: Third Vds dependent parameter of impact ionization current (V) DOUBLE 0.05 no
    fbjtii: --- DOUBLE 0 no
    vdsatii0: Nominal drain saturation voltage at threshold for impact ionization current (V) DOUBLE 0.8 no
    tii: Temperature dependent parameter for impact ionization current DOUBLE -0.2 no
    lii: Channel length dependent parameter at threshold for impact ionization current DOUBLE 5e-08 no
    esatii: Saturation channel electric field for impact ionization current (V/m) DOUBLE 1e+08 no
    sii0: First Vgs dependent parameter for impact ionization current (V^-1) DOUBLE 0.5 no
    sii1: Second Vgs dependent parameter for impact ionization current (V^-1) DOUBLE 0 no
    sii2: Third Vgs dependent parameter for impact ionization current DOUBLE 0 no
    siid: Vds dependent parameter of drain voltage for impact ionization current (V^-1) DOUBLE 0 no
    agidl: GIDL constant (ohm^-1) DOUBLE 2e-09 no
    bgidl: GIDL Exponential coefficient (V/m) DOUBLE 2e+09 no
    ngidl: GIDL Vds enhancement coefficient (V) DOUBLE 0.5 no
    ebg: ----- DOUBLE 1.2 no
    vgb1: ----- DOUBLE 300 no
    vgb2: ------ DOUBLE 17 no
    voxh: ---- DOUBLE 5 no
    deltavox: ------- DOUBLE 0.005 no
    ntox: -------- DOUBLE 1 no
    ntun: Reverse tunneling non-ideality factor DOUBLE 3.6 no
    ndiode: Diode non-ideality factor DOUBLE 1 no
    nrecf0: Recombination non-ideality factor at forward bias DOUBLE 1.8 no
    nrecr0: Recombination non-ideality factor at reversed bias DOUBLE 1 no
    isbjt: BJT Injection saturation current (A/m^2) DOUBLE 3e-07 no
    isdif: Body to source/drain injection saturation current (A/m^2) DOUBLE 3e-08 no
    isrec: Recombination in depletion saturation current (A/m^2) DOUBLE 0.0005 no
    istun: Reverse tunneling saturation current (A/m^2) DOUBLE 1e-08 no
    vrec0: Voltage dependent parameter for recombination current (V) DOUBLE 0.05 no
    vtun0: Voltage dependent parameter for tunneling current (V) DOUBLE 5 no
    nbjt: Power coeffcient of channel length dependency for bipolar current DOUBLE 1 no
    lbjt0: Reference channel length for bipolar current (m) DOUBLE 2e-07 no
    vabjt: Early Voltage for bipolar current (V) DOUBLE 10 no
    aely: Channel length dependency of early voltage for bipolar current (V/m) DOUBLE 0 no
    ahli: High ;evel injection parameter for bipolar current DOUBLE 1e-15 no
    vevb: ---- DOUBLE 0.075 no
    vecb: ----- DOUBLE 0.026 no
    cjswg: Source/Drain (gate side) sidewall junction capacitance per unit width (normalized to 100nm tsi) (F/m^2) DOUBLE 5e-10 no
    mjswg: Source/Drain (gate side) sidewall junction capacitance grading coefficient (V) DOUBLE 0.5 no
    pbswg: Source/Drain (gate side) sidewall junction capacitance built in potential (V) DOUBLE 0.8 no
    tt: Diffusion capacitance transit time coefficient (sec) DOUBLE 5e-10 no
    ldif0: ldif0 DOUBLE 0.001 no
    cgeo: Gate substrate overlap capacitance per unit channel length (F/m) DOUBLE 0 no
    cgso: ------ DOUBLE 6.5e-10 no
    cgdo: ------- DOUBLE 6e-10 no
    dlc: Length offset fitting parameter for gate charge (m) DOUBLE 0 no
    dwc: Width offset fitting parameter from C-V (m) DOUBLE 0 no
    dlcb: Length offset fitting parameter for body charge (m) DOUBLE 0 no
    dlbg: Length offset fitting parameter for backgate charge (m) DOUBLE 0 no
    fbody: Scaling factor for body charge DOUBLE 1 no
    clc: Constant term for the short channel model (m) DOUBLE 1e-07 no
    cle: Exponential term for the short channel model DOUBLE 0.6 no
    cf: ---in the pgm DOUBLE 0 no
    csdmin: ----- DOUBLE 2.5e-05 no
    asd: -------- DOUBLE 0.5 no
    csdesw: S/D sidewall fringing capacitance per unit length (F/m) DOUBLE 0 no
    vsdfb: ------- DOUBLE -0.8 no
    vsdth: ---------- DOUBLE -0.3 no
    delvt: Threshold voltage adjust for C-V (V) DOUBLE 0 no
    acde: ---in the pghm DOUBLE 0 no
    moin: Coefficient for the gate-bias dependent surface potential V^0.5 DOUBLE 15 no
    ckappa: Coefficient for lightly doped region overlap capacitance fringing field capacitance (F/m) DOUBLE 0.6 no
    cgdl: Light doped drain-gate region overlap capacitance (F/m) DOUBLE 0 no
    cgsl: Light doped source-gate region overlap capacitance (F/m) DOUBLE 0 no
    ndif: ndif DOUBLE -1 no
    rth0: ------ DOUBLE 0.09 no
    cth0: ---------- DOUBLE 1e-05 no
    tpbswg: ---------- DOUBLE 0 no
    tcjswg: ---------- DOUBLE 0.0005 no
    kt1: Temperature coefficient of Vth (V) DOUBLE -0.2 no
    kt1l: Channel length dependence of the temperature coefficient of Vth (V*m) DOUBLE 8e-09 no
    kt2: Body-bias coefficient of the Vth temperature effect DOUBLE -0.06 no
    ute: Temperature coefficient of mobility DOUBLE -1.5 no
    ua1: Temperature coefficient for ua (m/V) DOUBLE 3e-10 no
    ub1: Temperature coefficient for ub ((m/V)^2) DOUBLE -3e-18 no
    uc1: Temperature coefficient for uc (1/V) DOUBLE -6e-11 no
    prt: Temperature coefficient of rdsw (ohm-um) DOUBLE 10 no
    at: Temperature coefficient of vsat (m/sec) DOUBLE 65000 no
    ntrecf: Temperature coefficient for Nrecf DOUBLE 0.1 no
    ntrecr: Temperature coefficient for Nrecr DOUBLE -1 no
    xbjt: xbjt DOUBLE 1e-20 no
    xdif: xdif DOUBLE 1.6 no
    xrec: xrec DOUBLE 0.8 no
    xtun: xtun DOUBLE 6 no
    dlcig: --- DOUBLE 0 no
    nbc: ---- DOUBLE 0 no
    nseg: ---- DOUBLE 1 no
    pdbcp: ----- DOUBLE 0 no
    psbcp: ----- DOUBLE 0 no
    toxqm: ---- DOUBLE 5e-09 no
    type: ----- DOUBLE 1 no
    toxm: =---- DOUBLE 5e-09 no
    xt1: Doping depth DOUBLE 1.55e-07 no
    dvbd0: dvbd0 DOUBLE 0 no
    dvbd1: dvbd1 DOUBLE 0 no
    temp: Circuit temperature DOUBLE 300.15 no
    npeak: -- DOUBLE 5.8e+17 no
    capMod: Capacitance model DOUBLE 2 no

    fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09