mosn1

Schichman-Hodges Mosfet model


Click here for pdf documentation.

Author(s): Aaron Walker

Usage:

Parameter TypeDefault value Required?
vt0: Zero-bias threshold voltage (V) DOUBLE 0 no
kp: Transconductance parameter (A/V^2) DOUBLE 2e-05 no
gamma: Bulk threshold parameter (V^1/2) DOUBLE 0 no
phi: Surface inversion potential (V) DOUBLE 0.6 no
lambda: Channel-length modulation (1/V) DOUBLE 0 no
rd: Drain ohmic resistance DOUBLE 0 no
rs: Source ohmic resistance DOUBLE 0 no
cbd: B-D junction capacitance DOUBLE 0 no
cbs: B-S junction capacitance DOUBLE 0 no
is: Bulk junction saturation current DOUBLE 1e-14 no
pb: Bulk junction potential DOUBLE 0.8 no
cgso: Gate-source overlap capacitance DOUBLE 0 no
cgdo: Gate-drain overlap capacitance DOUBLE 0 no
cgbo: Gate-bulk overlap capacitance DOUBLE 0 no
rsh: Sheet resistance DOUBLE 0 no
cj: Bottom junction capacitance per area DOUBLE 0 no
mj: Bottom grading coefficient DOUBLE 0.5 no
cjsw: Side junction capacitance per area DOUBLE 0 no
mjsw: Side grading coefficient DOUBLE 0.5 no
js: Bulk junction saturation current density DOUBLE 0 no
tox: Oxide thickness (m) DOUBLE 1e-07 no
ld: Lateral diffusion (m) DOUBLE 0 no
u0: Surface mobility (cm^2/V-s) DOUBLE 600 no
fc: Forward bias junction fit parameter DOUBLE 0.5 no
nsub: Substrate doping (1/m^3) DOUBLE 1e+15 no
tpg: Type of gate material DOUBLE 1 no
nss: Surface state density. DOUBLE 0 no
tnom: Nominal device temperature (C) DOUBLE 27 no
kf: Flicker noise coefficient DOUBLE 0 no
af: Flicker noise exponent DOUBLE 1 no
t: Device temperature (C) DOUBLE 27 no
l: Gate length (m) DOUBLE 2e-06 no
w: Gate width (m) DOUBLE 5e-05 no
alpha: Impact ionization current coefficient (1/V) DOUBLE 0 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09