mesfettom |
Triquint TOM model |
|---|
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Author(s): Shuping Zhang| Parameter | Type | Default value | Required? |
|---|---|---|---|
| vgsi: Intrinsic gate-source voltage(V) | DOUBLE | -0.5 | no |
| vgdi: Intrinsic gate-drain voltage(V) | DOUBLE | -3.5 | no |
| vdsi: Intrinsic drain-source voltage(V) | DOUBLE | 3 | no |
| vmax: max voltage(V) | DOUBLE | 0.5 | no |
| k: Boltzmann's constant | DOUBLE | 1.38e-23 | no |
| beta: Transconductance coefficient (A/V^2) | DOUBLE | 0.1 | no |
| vt0: Pinch-off voltage (V) | DOUBLE | -2 | no |
| gama: Slope parameter of pinch-off voltage | DOUBLE | 1.5 | no |
| q: Power law parameter | DOUBLE | 2 | no |
| delt: Slope of drain characteristic in the saturated region (/A V) | DOUBLE | 0.2 | no |
| alfa: Slope of drain characteristic in the linear region (/V) | DOUBLE | 2 | no |
| t: Channel transit-time delay (sec) | DOUBLE | 0 | no |
| cgs0: Gate-source schottly barrier capacitance at Vgs=0 (farad) | DOUBLE | 0 | no |
| cgd0: Gate-drain schottly barrier capacitance at Vgd=0 (farad) | DOUBLE | 0 | no |
| vbi: Built-in barrier potential (V) | DOUBLE | 0.8 | no |
| is: Saturation current of diodes (A) | DOUBLE | 0 | no |
| n: Ideality factor | DOUBLE | 1 | no |
| ib0: Reverse breakdown saturation current (A) | DOUBLE | 0 | no |
| nr: Reverse breakdown ideality factor | DOUBLE | 10 | no |
| vbd: Reverse breakdown voltage (V) | DOUBLE | 1e+10 | no |
| tj: Junction temperature (K) | INTEGER | 0 | no |
| t1: Scan time (ms) | DOUBLE | 100 | no |
| tnom: Reference Temperature (K) | DOUBLE | 293 | no |
| tbet: BETA power law temperature coefficient (1/K) | DOUBLE | 0 | no |
| xti: Diode saturation current temperature exponent | DOUBLE | 2 | no |
| avt0: Pinch-off voltage(vt0)linear temperature cofficient(/K) | DOUBLE | 0 | no |
| bvt0: Pinch-off voltage(vt0) quadratic tempature cofficent(/K^2) | DOUBLE | 0 | no |
| eg: Brrier height at 0K | DOUBLE | 0.8 | no |
| tm: Ids linear temp. coeff. (1/K) | DOUBLE | 0 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09