mesfettom

Triquint TOM model


Click here for pdf documentation.

Author(s): Shuping Zhang

Usage:

Parameter TypeDefault value Required?
vgsi: Intrinsic gate-source voltage(V) DOUBLE -0.5 no
vgdi: Intrinsic gate-drain voltage(V) DOUBLE -3.5 no
vdsi: Intrinsic drain-source voltage(V) DOUBLE 3 no
vmax: max voltage(V) DOUBLE 0.5 no
k: Boltzmann's constant DOUBLE 1.38e-23 no
beta: Transconductance coefficient (A/V^2) DOUBLE 0.1 no
vt0: Pinch-off voltage (V) DOUBLE -2 no
gama: Slope parameter of pinch-off voltage DOUBLE 1.5 no
q: Power law parameter DOUBLE 2 no
delt: Slope of drain characteristic in the saturated region (/A V) DOUBLE 0.2 no
alfa: Slope of drain characteristic in the linear region (/V) DOUBLE 2 no
t: Channel transit-time delay (sec) DOUBLE 0 no
cgs0: Gate-source schottly barrier capacitance at Vgs=0 (farad) DOUBLE 0 no
cgd0: Gate-drain schottly barrier capacitance at Vgd=0 (farad) DOUBLE 0 no
vbi: Built-in barrier potential (V) DOUBLE 0.8 no
is: Saturation current of diodes (A) DOUBLE 0 no
n: Ideality factor DOUBLE 1 no
ib0: Reverse breakdown saturation current (A) DOUBLE 0 no
nr: Reverse breakdown ideality factor DOUBLE 10 no
vbd: Reverse breakdown voltage (V) DOUBLE 1e+10 no
tj: Junction temperature (K) INTEGER 0 no
t1: Scan time (ms) DOUBLE 100 no
tnom: Reference Temperature (K) DOUBLE 293 no
tbet: BETA power law temperature coefficient (1/K) DOUBLE 0 no
xti: Diode saturation current temperature exponent DOUBLE 2 no
avt0: Pinch-off voltage(vt0)linear temperature cofficient(/K) DOUBLE 0 no
bvt0: Pinch-off voltage(vt0) quadratic tempature cofficent(/K^2) DOUBLE 0 no
eg: Brrier height at 0K DOUBLE 0.8 no
tm: Ids linear temp. coeff. (1/K) DOUBLE 0 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09