mesfetmq |
Intrinsic MESFET using the Materka-Kacprzac model |
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Author(s): Senthil Velu| Parameter | Type | Default value | Required? |
|---|---|---|---|
| idss: Drain saturation current for Vgs=0 (A) | DOUBLE | 0.1 | no |
| vp0: Pinch-off voltage for Vds=0 (V) | DOUBLE | -2 | no |
| gama: Voltage slope parameter of pinch-off voltage (1/V) | DOUBLE | 0 | no |
| e: Constant part of power law parameter | DOUBLE | 2 | no |
| ke: Dependence of power law on Vgs (1/V) | DOUBLE | 0 | no |
| sl: Slope of the Vgs=0 drain characteristic in the saturated region (S) | DOUBLE | 0.15 | no |
| kg: Drain dependence on Vgs in the linear region (1/V) | DOUBLE | 0 | no |
| ss: Slope of the drain characteristic in the saturated region (S) | DOUBLE | 0 | no |
| t: Channel transit-time delay (s) | DOUBLE | 0 | no |
| ig0: Saturation current of gate-source Schottky barrier (A) | DOUBLE | 0 | no |
| afag: Slope factor of gate conduction current (1/V) | DOUBLE | 38.696 | no |
| ib0: Current parameter of gate-drain breakdown source (A) | DOUBLE | 0 | no |
| afab: Slope factor of breakdown current (1/V) | DOUBLE | 0 | no |
| vbc: Breakdown voltage (V) | DOUBLE | 1e+10 | no |
| r10: Intrinsic channel resistance for Vgs = 0 (Ohm) | DOUBLE | 0 | no |
| kr: Slope factor of intrinsic channel resistance (1/V) | DOUBLE | 0 | no |
| c10: Gate-source Schottky barrier capacitance for Vgs = 0 (F) | DOUBLE | 0 | no |
| k1: Slope parameter of gate-source capacitance (1/V) | DOUBLE | 1.25 | no |
| c1s: Constant parasitic component of gate-source capacitance (F) | DOUBLE | 0 | no |
| cf0: Gate-drain feedback capacitance for Vgd = 0 (F) | DOUBLE | 0 | no |
| kf: Slope parameter of gate-drain feedback capacitance (1/V) | DOUBLE | 1.25 | no |
| area: Area multiplier | DOUBLE | 1 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09