mesfetcq

Intrinsic MESFET using Curtice-Ettemberg cubic model


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Author(s): Senthil Velu

Usage:

Parameter TypeDefault value Required?
a0: Drain saturation current for Vgs=0 (A) DOUBLE 0.1 no
a1: Coefficient for V1 (A/V) DOUBLE 0.05 no
a2: Coefficient for V1^2 (A/V^2) DOUBLE 0 no
a3: Coefficient for V1^3 (A/V^3) DOUBLE 0 no
beta: V1 dependance on Vds (1/V) DOUBLE 0 no
vds0: Vds at which BETA was measured (V) DOUBLE 4 no
gama: Slope of drain characteristic in the linear region (1/V) DOUBLE 1.5 no
vt0: Voltage at which the channel current is forced to be zero for Vgs<=Vto (V) DOUBLE -1e+10 no
cgs0: Gate-source Schottky barrier capacitance for Vgs=0 (F) DOUBLE 0 no
cgd0: Gate-drain Schottky barrier capacitance for Vgd=0 (F) DOUBLE 0 no
is: Diode saturation current (A) DOUBLE 0 no
n: Diode ideality factor DOUBLE 1 no
ib0: Breakdown current parameter (A) DOUBLE 0 no
nr: Breakdown ideality factor DOUBLE 10 no
t: Channel transit time (s) DOUBLE 0 no
vbi: Built-in potential of the Schottky junctions (V) DOUBLE 0.8 no
fcc: Forward-bias depletion capacitance coefficient (V) DOUBLE 0.5 no
vbd: Breakdown voltage (V) DOUBLE 1e+10 no
tnom: Reference Temperature (K) DOUBLE 293 no
avt0: Pinch-off voltage (VP0 or VT0) linear temp. coefficient (1/K) DOUBLE 0 no
bvt0: Pinch-off voltage (VP0 or VT0) quadratic temp. coefficient (1/K^2) DOUBLE 0 no
tbet: BETA power law temperature coefficient (1/K) DOUBLE 0 no
tm: Ids linear temp. coeff. (1/K) DOUBLE 0 no
tme: Ids power law temp. coeff. (1/K^2) DOUBLE 0 no
eg: Barrier height at 0.K (eV) DOUBLE 0.8 no
m: Grading coefficient DOUBLE 0.5 no
xti: Diode saturation current temperature exponent DOUBLE 2 no
tj: Junction Temperature (K) DOUBLE 293 no
area: Area multiplier DOUBLE 1 no

fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09