hbtnpnxt |
HBT Model, NPN, UCSD, Electro-thermal |
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Author(s): Jian Ding, Sonali Luniya| Parameter | Type | Default value | Required? |
|---|---|---|---|
| type: Type, only NPN currently | DOUBLE | 1 | no |
| afn: Flicker noise exponent for current | DOUBLE | 1.5 | no |
| bf: Forward ideal current gain | DOUBLE | 200000 | no |
| bfn: BE flicker noise exponent for frequency | DOUBLE | 1 | no |
| bkdn: Flag denoting that BC breakdown should be included [logic] | BOOLEAN | false | no |
| br: Reverse ideal current gain | DOUBLE | 1000 | no |
| bvc: Collector-base breakdown voltage BVcbo [V] | DOUBLE | 28 | no |
| ccmin: Minimum value of intrinsic BC Cj [F] | DOUBLE | 9.89e-15 | no |
| cemin: Minimum BE capacitance [F] | DOUBLE | 1.09e-14 | no |
| cjc: Intrinsic BC depletion capacitance at zero bias [F] | DOUBLE | 1.4e-14 | no |
| cjcx: Extrinsic BC depletion capacitance at zero bias [F] | DOUBLE | 1.6e-14 | no |
| cje: BE depletion capacitance at zero bias [F] | DOUBLE | 1.88e-14 | no |
| cjs: Collector-substrate depletion capacitance (0 bias) [F] | DOUBLE | 0 | no |
| cth: Thermal capacitance of device [C/joule] | DOUBLE | 3e-10 | no |
| cxmin: Minimum extrinsic Cbc [F] | DOUBLE | 3.6e-14 | no |
| dtmax: Maximum expected temperature rise above heatsink [C] | DOUBLE | 1000 | no |
| eaa: Added activation energy for ISE temp dependence [V] | DOUBLE | 0.105 | no |
| eab: Added activation energy for ISC temp dependence [V] | DOUBLE | 0 | no |
| eac: Activation energy for ISB temperature dependence [V] | DOUBLE | -0.1 | no |
| eae: Activation energy for ISA temperature dependence [V] | DOUBLE | -0.495 | no |
| eax: Added activation energy for ISEX temp dependence [V] | DOUBLE | 0 | no |
| eg: Activation energy for IS temperature dependence [V] | DOUBLE | 0.271 | no |
| fa: Factor for specification of avalanche voltage | DOUBLE | 0.995 | no |
| fc: Factor for start of high bias BC Cj approximation | DOUBLE | 0.8 | no |
| fce: Factor for start of high bias BE Cj approximation | DOUBLE | 0.9 | no |
| fex: Factor to determine excess phase | DOUBLE | 1 | no |
| icrit0: Critical current for intrinsic Cj variation [A] | DOUBLE | 0.035 | no |
| ics: Saturation value for collector-substrate current [A] | DOUBLE | 0 | no |
| ik: Knee current for dc high injection effect [A] | DOUBLE | 2 | no |
| ikrk: Characteristic current for Kirk effect [A] | DOUBLE | 0.023 | no |
| is: Saturation value for forward collector current [A] | DOUBLE | 5e-16 | no |
| isa: Collector current EB barrier limiting current [A] | DOUBLE | 1e+10 | no |
| isb: Collector current BC barrier limiting current [A] | DOUBLE | 2e-13 | no |
| isc: Saturation value for intrinsic bc junction current [A] | DOUBLE | 2.16e-15 | no |
| iscx: Saturation value for extrinsic bc junction current [A] | DOUBLE | 3e-09 | no |
| ise: Saturation value for nonideal base current [A] | DOUBLE | 1.05e-17 | no |
| isex: Saturation value for emitter leakage diode [A] | DOUBLE | 3e-09 | no |
| itc: Characteristic current for TFC [A] | DOUBLE | 0.06 | no |
| itc2: Characteristic current for TFC [A] | DOUBLE | 0.04 | no |
| kfn: BE flicker noise constant | DOUBLE | 0 | no |
| mjc: Exponent for voltage variation of Intrinsic BC Cj | DOUBLE | 0.5 | no |
| mjcx: Exponent for voltage variation of Extrinsic BC Cj | DOUBLE | 0.3 | no |
| mje: Exponent for voltage variation of BE Cj | DOUBLE | 0.507 | no |
| mjs: Exponent for voltage variation of CS Cj | DOUBLE | 0.01 | no |
| na: Collector current EB barrier ideality factor | DOUBLE | 10 | no |
| nb: Collector current BC barrier ideality factor | DOUBLE | 3 | no |
| nbc: Exponent for BC multiplication factor vs voltage | DOUBLE | 6 | no |
| nc: Ideality factor for intrinsic bc junction current | DOUBLE | 1 | no |
| ncs: Ideality factor for collector-substrate current | DOUBLE | 2 | no |
| ncx: Ideality factor for extrinsic bc junction current | DOUBLE | 22 | no |
| ne: Ideality factor for nonideal forward base current | DOUBLE | 1.15 | no |
| nex: Ideality factor for emitter leakage diode | DOUBLE | 22 | no |
| nf: Forward collector current ideality factor | DOUBLE | 1.15 | no |
| nr: Reverse current ideality factor | DOUBLE | 1.03 | no |
| rbi: Intrinsic base resistance [ohm] | DOUBLE | 10.5 | no |
| rbx: Extrinsic base resistance [ohm] | DOUBLE | 0 | no |
| rci: Intrinsic collector resistance [ohm] | DOUBLE | 0 | no |
| rcx: Extrinsic collector resistance [ohm] | DOUBLE | 1 | no |
| re: Emitter resistance [ohm] | DOUBLE | 2.5 | no |
| rex: Extrinsic emitter leakage diode series resistance [ohm] | DOUBLE | 0 | no |
| rth: Thermal resistance from device to thermal ground [C/W] | DOUBLE | 2200 | no |
| tbcxs: Excess BC heterojunction transit time [s] | DOUBLE | 0 | no |
| tbexs: Excess BE heterojunction transit time [s] | DOUBLE | 0 | no |
| tfb: Base transit time [s] | DOUBLE | 2.5e-13 | no |
| tfc0: Collector forward transit time [s] | DOUBLE | 0 | no |
| tkrk: Forward transit time for Kirk effect [s] | DOUBLE | 5.5e-14 | no |
| tnc: Coefficient for NC temperature dependence | DOUBLE | 0 | no |
| tne: Coefficient for NE temperature dependence | DOUBLE | 0 | no |
| tnex: Coefficient for NEX temperature dependence | DOUBLE | 0 | no |
| tnom: Temperature at which model parameters are given [K] | DOUBLE | 300 | no |
| tr: Reverse charge storage time for intrinsic BC diode [s] | DOUBLE | 3.5e-10 | no |
| trx: Charge storage time for extrinsic BC diode [s] | DOUBLE | 3.5e-10 | no |
| tre: Charge storage time[s] | DOUBLE | 3.5e-10 | no |
| tvjc: Coefficient for VJC temperature dependence [V/C] | DOUBLE | -0.0015 | no |
| tvjci: Coefficient for VJCI temperature dependence [V/C] | DOUBLE | -0.0015 | no |
| tvjcx: Coefficient for VJCX temperature dependence [V/C] | DOUBLE | -0.0015 | no |
| tvje: Coefficient for VJE temperature dependence [V/C] | DOUBLE | -0.0015 | no |
| tvjs: Coefficient for VJS temperature dependence [V/C] | DOUBLE | -0.0015 | no |
| vaf: Forward Early voltage [V] | DOUBLE | 300 | no |
| var: Reverse Early voltage [V] | DOUBLE | 100 | no |
| vjc: Intrinsic BC diode builtin potential for Cj estimation [V] | DOUBLE | 0.242 | no |
| vjci: Vjci [V] | DOUBLE | 0.242 | no |
| vjcx: Extrinsic BC diode builtin potential for Cj estimation [V] | DOUBLE | 0.35 | no |
| vje: BE diode builtin potential for Cj estimation [V] | DOUBLE | 1 | no |
| vjs: CS diode builtin potential for Cj estimation [V] | DOUBLE | 1.4 | no |
| vkrk: Characteristic Voltage for Kirk effect [V] | DOUBLE | 0.25 | no |
| vtc: Characteristic voltage for TFC [V] | DOUBLE | 0.5 | no |
| xcjc: Factor for partitioning extrinsic BC Cj | DOUBLE | 1 | no |
| xrb: Exponent for RB temperature dependence | DOUBLE | 0.5 | no |
| xrc: Exponent for RC temperature dependence | DOUBLE | 0.5 | no |
| xre: Exponent for RE temperature dependence | DOUBLE | 0.5 | no |
| xrex: Exponent for REX temperature dependence | DOUBLE | 0.5 | no |
| xrt: Exponent for RTH temperature dependence | DOUBLE | 1.2 | no |
| xtb: Exponent for beta temperature dependence | DOUBLE | -2.8 | no |
| xti: Exponent for IS temperature dependence | DOUBLE | 2 | no |
| xtikrk: Exponent for IKRK temperature dependence | DOUBLE | 0.6 | no |
| xtitc: Exponent for ITC temperature dependence | DOUBLE | 0 | no |
| xtitc2: Exponent for ITC2 temperature dependence | DOUBLE | 0 | no |
| xttf: Exponent for TF temperature dependence | DOUBLE | 0.75 | no |
| xttkrk: Exponent for TKRK temperature dependence | DOUBLE | 0.6 | no |
| xtvkrk: Exponent for VKRK temperature dependence | DOUBLE | 0.6 | no |
| kirchhoff: Use Kirchhoff transformation flag | BOOLEAN | false | no |
| b: Thermal conductivity temperature exponent | DOUBLE | 1.22 | no |
| ts: Kirchhoff transformation temperature (K) | DOUBLE | 300 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09