cmosinvt |
CMOS Inverter, Electro-thermal |
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Author(s): Tony Mulder, Travis Lentz| Parameter | Type | Default value | Required? |
|---|---|---|---|
| vtn: NMOS Threshold Voltage (V) | DOUBLE | 1 | no |
| vtp: PMOS Threshold Voltage (V) | DOUBLE | -1 | no |
| un: Effective Mobility of Electrons in NMOS ((cm^2)/(V-sec)) | DOUBLE | 500 | no |
| up: Effective Mobility of Holes in PMOS ((cm^2)/(V-sec)) | DOUBLE | 200 | no |
| en: Permittivity of the Gate Insultor in NMOS (F/cm) | DOUBLE | 3.4515e-13 | no |
| ep: Permittivity of the Gate Insultor in PMOS (F/cm) | DOUBLE | 3.4515e-13 | no |
| tox: Thickness of the Gate Insulator (cm) | DOUBLE | 2e-06 | no |
| wn: Channel Width of NMOS (cm) | DOUBLE | 2e-06 | no |
| ln: Channel Length of NMOS (cm) | DOUBLE | 5e-05 | no |
| wp: Channel Width of PMOS (cm) | DOUBLE | 2e-06 | no |
| lp: Channel Length of PMOS (cm) | DOUBLE | 0.0001 | no |
| td: Response Delay Time (sec) | DOUBLE | 0 | no |
| thermal: Thermal element flag | BOOLEAN | false | no |
| ts: Kirchhoff transformation temperature (K) | DOUBLE | 300 | no |
| tnom: Ambient temperature (K) | DOUBLE | 300 | no |
| zt: Thermal impedence summation (K/W) | DOUBLE | 310 | no |
| c1: P channel GS capacitance (F) | DOUBLE | 1e-12 | no |
| c2: N channel GS capacitance (F) | DOUBLE | 1e-12 | no |
| c3: output GS (Miller) capacitance (F) | DOUBLE | 1e-12 | no |
| c4: parasitic diode capacitance from out to Vdd (F) | DOUBLE | 1e-12 | no |
| c5: parasitic diode capacitance from out to Gnd(F) | DOUBLE | 1e-12 | no |
| freq: operating frequency (Hz) | DOUBLE | 1e+06 | no |
| lk: leakage current (A) | DOUBLE | 8e-06 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09