capacitormos |
MOS Capacitor with tunneling |
|---|
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Author(s): Krishnanshu Dandu and Yawei Jin| Parameter | Type | Default value | Required? |
|---|---|---|---|
| w: Width of the device (in cm) | DOUBLE | n/a | yes |
| l: Length of the gate (in cm) | DOUBLE | n/a | yes |
| tox: Oxide thickness (cm) | DOUBLE | 2.48e-07 | no |
| t: Temperature (Kelvin) | DOUBLE | 300 | no |
| npoly: Poly Doping /cm3 | DOUBLE | 9e+19 | no |
| nsub: Substrate Doping /cm3 | DOUBLE | 4.7e+17 | no |
| moxecb: Effective mass of electron for ECB (kg) | DOUBLE | 3.64e-31 | no |
| moxevb: Effective mass of electron for EVB(kg) | DOUBLE | 2.73e-31 | no |
| moxhvb: Effective mass of electron for HVB (kg) | DOUBLE | 2.91e-31 | no |
| phibecb: Electron Tunneling Barrier Height (eV) | DOUBLE | 3.1 | no |
| phibevb: Electron Tunneling Barrier Height (eV) | DOUBLE | 4.2 | no |
| phibhvb: Electron Tunneling Barrier Height (eV) | DOUBLE | 4.5 | no |
| phib0ecb: Si/SiO2 Barrier Height for ECB (eV) | DOUBLE | 3.1 | no |
| phib0evb: Si/SiO2 Barrier Height for EVB (eV) | DOUBLE | 3.1 | no |
| phib0hvb: Si/SiO2 Barrier Height for HVB(eV) | DOUBLE | 4.5 | no |
| vfb: Flat-Band Voltage (V) | DOUBLE | -0.9 | no |
| epsrox: Relative Permittivity of Oxide | DOUBLE | 3.9 | no |
| s: subthreshold swing (mv/dec) | DOUBLE | 0.075 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09