capacitorjn |
Philips MOS9 -- CapacitorJn model |
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Author(s): Yogesh Ramdoss, Kuldip Gothi, Xuemin Yang, Ajit Rajagopalan, Dapeng ding, Xin Cai| Parameter | Type | Default value | Required? |
|---|---|---|---|
| level: level of this model. Must be set to 1 | DOUBLE | 1 | no |
| ab: Diffusion area (m2) | DOUBLE | 1e-12 | no |
| ls: Length of the side-wall of the diffusion area ab which is not under the gate(m) | DOUBLE | 1e-06 | no |
| lg: Length of the side-wall of the diffusion area ab which is under the gate (m) | DOUBLE | 1e-06 | no |
| dta: Temperature offset of the JUNCAP element with respect to TA (oC) | DOUBLE | 0 | no |
| tr: Temperature at which the parameters have been determined (oC) | DOUBLE | 25 | no |
| vr: Voltage at which parameters have been determined(V) | DOUBLE | 0 | no |
| jsgbr: Bottom saturation-current density due to electron-hole generation at V = vr (Am-2) | DOUBLE | 0.001 | no |
| jsdbr: Bottom saturation-current density due to diffusion from back contact (Am-2) | DOUBLE | 0.001 | no |
| jsgsr: Sidewall saturation-current density due to electron-hole generation at V = vr (Am-1) | DOUBLE | 0.001 | no |
| jsdsr: Sidewall saturation-current density due to diffusion from back contact (Am-1) | DOUBLE | 0.001 | no |
| jsggr: Gate edge saturation-current density due to electron-hole generation at V = vr (Am-1) | DOUBLE | 0.001 | no |
| jsdgr: Gate edge saturation-current density due to diffusion from back contact (Am-1) | DOUBLE | 0.001 | no |
| nb: Emission coefficient of the bottom forward current | DOUBLE | 1 | no |
| ns: Emission coefficient of the sidewall forward current | DOUBLE | 1 | no |
| ng: Emission coefficient of the gate edge forward current | DOUBLE | 1 | no |
| vb: Reverse breakdown voltage (V) | DOUBLE | 0.9 | no |
| cjbr: Bottom junction capacitance at V = vr (Fm-2) | DOUBLE | 1e-12 | no |
| cjsr: Sidewall junction capacitance at V = vr (Fm-1) | DOUBLE | 1e-12 | no |
| cjgr: Gate edge junction capacitance at V = vr (Fm-1) | DOUBLE | 1e-12 | no |
| vdbr: Diffusion voltage of the bottom junction at T = tr(V) | DOUBLE | 1 | no |
| vdsr: Diffusion voltage of the sidewall junction at T = tr(V) | DOUBLE | 1 | no |
| vdgr: Diffusion voltage of the gate edge junction at T = tr(V) | DOUBLE | 1 | no |
| pb: Bottom-junction grading coefficient | DOUBLE | 0.4 | no |
| ps: Sidewall-junction grading coefficient | DOUBLE | 0.4 | no |
| pg: Gate-edge-junction grading coefficient | DOUBLE | 0.4 | no |
fREEDA Version 1.3 compiled on Jul 25 2007 12:04:09